Records |
Author |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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Journal Article |
Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
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10 |
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1379-1383 |
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Ge, cyclotron resonance, charged impurities, |
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1772 |
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Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
22 |
Issue |
4 |
Pages |
95-97 |
Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Author |
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Title |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
Type |
Journal Article |
Year |
1972 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Volume |
6 |
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362-363 |
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Ge, cyclotron resonance, quantizing magnetic fields |
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1774 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
290-302 |
Keywords |
NbN HEB mixers, fabrication process |
Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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Author |
Cherednichenko, S.; Kroug, M.; Merkel, H.; Kollberg, E.; Loudkov, D.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Gershenzon, E. |
Title |
Local oscillator power requirement and saturation effects in NbN HEB mixers |
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Conference Article |
Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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Pages |
273-285 |
Keywords |
NbN HEB mixers, LO power, local oscillator power, saturation effect, dynamic range |
Abstract |
The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics. |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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318 |
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Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M. |
Title |
Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies |
Type |
Conference Article |
Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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Pages |
286-296 |
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NbN HEB mixers |
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San Diego, CA, USA |
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323 |
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