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Author Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.
Title Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves Type Conference Article
Year 1986 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 50 Issue Pages 280-281
Keywords Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication (up) Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0367-6755 ISBN Medium
Area Expedition Conference 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985
Notes Approved no
Call Number Serial 1708
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Author Gershenzon, E. M.; Goltsman, G. N.
Title Zeeman effect in excited-states of donors in germanium Type Journal Article
Year 1972 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 6 Issue 3 Pages 509
Keywords Ge, donors, Zeeman effect
Abstract
Address
Corporate Author Thesis
Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication (up) Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1737
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Author Korneev, A. A.; Korneeva, Y. P.; Mikhailov, M. Yu.; Pershin, Y. P.; Semenov, A. V.; Vodolazov, D. Yu.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Yu.; Goltsman, G. N.
Title Characterization of MoSi superconducting single-photon detectors in the magnetic field Type Journal Article
Year 2015 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 25 Issue 3 Pages 2200504 (1 to 4)
Keywords SSPD, SNSPD
Abstract We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.
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Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ akorneev @ KorneevIEEE2015 Serial 991
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Author Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N.
Title Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers Type Journal Article
Year 2014 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 27 Issue 8 Pages 085013 (1 to 5)
Keywords NbN HEB mixers
Abstract In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices.
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Publisher Place of Publication (up) Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1358
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Author Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N.
Title Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer Type Journal Article
Year 2012 Publication Phys. Procedia Abbreviated Journal Phys. Procedia
Volume 36 Issue Pages 334-337
Keywords NbN HEB mixer
Abstract We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination.
Address
Corporate Author Thesis
Publisher Place of Publication (up) Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1875-3892 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1381
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Author Korneev, A.; Korneeva, Y.; Manova, N.; Larionov, P.; Divochiy, A.; Semenov, A.; Chulkova, G.; Vachtomin, Y.; Smirnov, K.; Goltsman, G.
Title Recent nanowire superconducting single-photon detector optimization for practical applications Type Journal Article
Year 2013 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 23 Issue 3 Pages 2201204 (1 to 4)
Keywords SSPD, SNSPD
Abstract In this paper, we present our approaches to the development of fiber-coupled superconducting single photon detectors with enhanced photon absorption. For such devices we have measured detection efficiency in wavelength range from 500 to 2000 nm. The best fiber coupled devices exhibit detection efficiency of 44.5% at 1310 nm wavelength and 35.5% at 1550 nm at 10 dark counts per second.
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Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
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Notes Approved no
Call Number RPLAB @ akorneev @ KorneevIEEE2013 Serial 996
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Author Palma, F.; Teppe, F.; Fatimy, A. E.; Green, R.; Xu, J.; Vachontin, Y.; Tredicucci, A.; Goltsman, G.; Knap, W.
Title THz communication system based on a THz quantum cascade laser and a hot electron bolometer Type Conference Article
Year 2010 Publication 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves Abbreviated Journal 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves
Volume Issue Pages 11623798 (1 to 2)
Keywords QCL, HEB detector
Abstract We present the experimental study of the direct emission – detection system based on the THz Quantum Cascade Laser as a source and Hot Electron Bolometer (HEB) detector – in view of its application as an optical communication system. We show that the system can efficiently transmit the QCL Terahertz pulses. We estimate the maximal modulation speed of the system to be about several GHz and show that it is limited only by the QCL pulse power supply, detector amplifier and connection line/wires parameters.
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Corporate Author Thesis
Publisher Place of Publication (up) Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1391
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Author Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector Type Journal Article
Year 2020 Publication Nanomaterials (Basel) Abbreviated Journal Nanomaterials (Basel)
Volume 10 Issue 5 Pages 1-12
Keywords detector; quantum dots; short-wave infrared range; silicon
Abstract In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
Address Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia
Corporate Author Thesis
Publisher Place of Publication (up) Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2079-4991 ISBN Medium
Area Expedition Conference
Notes PMID:32365694; PMCID:PMC7712218 Approved no
Call Number Serial 1151
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Author Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N.
Title Superconducting diamond films as perspective material for direct THz detectors Type Abstract
Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 82
Keywords KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP
Abstract Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013.
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Publisher Place of Publication (up) Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1173
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Author Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G.
Title NbN nanowire superconducting single-photon detector for mid-infrared Type Journal Article
Year 2012 Publication Phys. Procedia Abbreviated Journal Phys. Procedia
Volume 36 Issue Pages 72-76
Keywords NbN SSPD, SNSPD
Abstract Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response.
Address
Corporate Author Thesis
Publisher Place of Publication (up) Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1875-3892 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1382
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