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Smirnov, A. V.; Larionov, P. A.; Finkel, M. I.; Maslennikov, S. N.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
NbZr films for THz phonon-cooled HEB mixers |
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Conference Article |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 19th Int. Symp. Space Terahertz Technol. |
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44-47 |
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Keywords |
HEB, NbZr, material search |
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Groningen, Netherlands |
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577 |
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Baselmans, J.; Kooi, J.; Baryshev, A.; Yang, Z. Q.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
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Title |
Full characterization of small volume NbN HEB mixers for space applications |
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Conference Article |
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2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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457-462 |
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Keywords |
NbN HEB mixers |
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Abstract |
NbN phonon cooled HEB’s are one of the most promising bolometer mixer technologies for (near) future (space) applications. Their performance is usually quantified by mea- suring the receiver noise temperature at a given IF frequency, usually around 1 – 2 GHz. However, for any real applications it is vital that one fully knows all the relevant properties of the mixer, including LO power, stability, direct detection, gain bandwidth and noise bandwidth, not only the noise temperature at low IF frequencies. To this aim we have measured all these parameters at the optimal operating point of one single, small volume quasioptical NbN HEB mixer. We find a minimum noise temperature of 900 K at 1.46 THz. We observe a direct detection effect indicated by a change in bias current when changing from a 300 K hot load to a 77 K cold load. Due to this effect we overestimate the noise temperature by about 22% using a 300 K hot load and a 77 K cold load. The LO power needed to reach the optimal operating point is 80 nW at the receiver lens front, 59 nW inside the NbN bridge. However, using the isothermal technique we find a power absorbed in the NbN bridge of 25 nW, a difference of about a factor 2. We obtain a gain bandwidth of 2.3 GHz and a noise bandwidth of 4 GHz. The system Allan time is about 1 sec. in a 50 MHz spectral bandwidth and a deviation from white noise integration (governed by the radiometer equation) occurs at 0.2 sec., which implies a maximum integration time of a few seconds in a 1 MHz bandwidth spectrometer. |
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Göteborg, Sweden |
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363 |
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Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
Hot electron bolometer mixer for 20 – 40 THz frequency range |
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Conference Article |
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2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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393-397 |
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IR NbN HEB mixers |
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The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator. |
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Göteborg, Sweden |
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369 |
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Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P. |
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Title |
Terahertz imaging system based on superconducting heterodyne integrated receiver |
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Conference Article |
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2014 |
Publication |
Proc. THz and Security Applications |
Abbreviated Journal |
Proc. THz and Security Applications |
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113-125 |
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SIS mixer, SIR, THz imaging |
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The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.
In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K. |
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Springer Netherlands |
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Dordrecht |
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Corsi, C.; Sizov, F. |
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978-94-017-8828-1 |
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1368 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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290-302 |
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Keywords |
NbN HEB mixers, fabrication process |
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We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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