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| Author |
Ito, Hiroshi |
| Title |
High frequency photodiode work in Japan |
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Manuscript |
| Year |
2002 |
Publication |
Report at NTT photonics laboratories |
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1-4 |
| Keywords |
THz, terahertz communications, photodiode |
| Abstract |
The recent progress in the device performance of the uni-traveling-carrier photodiode (UTC-PD) is described. The UTC-PD utilizes only electrons as the active carriers, and this unique feature is the key to achieving excellent high-speed and high-output characteristics simultaneously. The achieved performance includes a record 3-dB bandwidth of 310 GHz, high-power photonic millimeter-wave generation with an output power of over +13 dBm at 100 GHz, high-output-voltage photoreceiver operation at bit rates of up to 80 Gbit/s, and demultiplexing operation at 200 Gbit/s using a monolithic PD-EAM optical gate. |
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596 |
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| Author |
Финкель, М. И. |
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Терагерцовые смесители на эффекте электронного разогрева в ультратонких плёнках NbN и NbTiN |
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Manuscript |
| Year |
2006 |
Publication |
М. МПГУ |
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HEB, detector, mixer, terahertz, THz, infrared, IR, direct detection effect, conversion bandwidth, conversion loss |
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Ph.D. thesis |
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597 |
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Рябчун, С. А. |
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Широкополосные высокостабильные терагерцовые смесители на горячих электронах из тонких сверхпроводниковых пленок NbN |
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Manuscript |
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2009 |
Publication |
М. МПГУ |
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98 |
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HEB, mixer, terahertz, THz, stability, Allan variance, conversion bandwidth, in-situ technique, Au contacts |
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Ph.D. thesis |
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598 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
| Title |
Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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Journal Article |
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2010 |
Publication |
Физика и техника полупроводников |
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44 |
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11 |
Pages |
1475-1478 |
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2DEG, AlGaAs/GaAs heterostructures mixers |
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Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K. |
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Duplicated as 1216 |
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RPLAB @ gujma @ |
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702 |
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Ryabchun, S. A.; Tretyakov, I. V.; Pentin, I. V.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N. |
| Title |
Low-noise wide-band hot-electron bolometer mixer based on an NbN film |
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Journal Article |
| Year |
2009 |
Publication |
Radiophys. Quant. Electron. |
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52 |
Issue |
8 |
Pages |
576-582 |
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HEB mixer, in-situ contacts, noise temperature, conversion gain bandwidth, diffusion cooling channel |
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We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process. |
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