| Records |
| Author |
Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
| Title |
Electron-phonon scattering rate in impure NbC films |
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Abstract |
| Year |
1998 |
Publication |
NASA/ADS |
Abbreviated Journal |
NASA/ADS |
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Issue |
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Pages |
Y35.08 |
| Keywords |
NbC films |
| Abstract |
The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA |
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1591 |
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Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
| Title |
Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3556-3559 |
| Keywords |
YBCO HTS HEB mixers |
| Abstract |
We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources. |
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1051-8223 |
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1592 |
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Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride |
Type |
Journal Article |
| Year |
1997 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
| Volume |
23 |
Issue |
6 |
Pages |
486-488 |
| Keywords |
NbN KID |
| Abstract |
A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K. |
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1063-7850 |
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1593 |
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Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. |
| Title |
Noise characteristics of a NbN hot-electron mixer at 2.5 THz |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3572-3575 |
| Keywords |
NbN HEB mixers |
| Abstract |
The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation. |
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1051-8223 |
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no |
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1594 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
| Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
| Keywords |
NbN HEB mixers |
| Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1051-8223 |
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1595 |
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Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
| Title |
Fast NbN superconducting switch controlled by optical radiation |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3734-3737 |
| Keywords |
NbN superconducting switch |
| Abstract |
The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits. |
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1051-8223 |
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no |
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Serial |
1596 |
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Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K. |
| Title |
Spiral antenna NbN hot-electron bolometer mixer at submm frequencies |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3395-3398 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB. |
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1051-8223 |
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no |
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1597 |
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Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
| Title |
Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths |
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Journal Article |
| Year |
1997 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
70 |
Issue |
12 |
Pages |
1619-1621 |
| Keywords |
NbN HEB mixers |
| Abstract |
Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell. |
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0003-6951 |
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no |
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1599 |
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Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Optical coupling and conversion gain for NbN HEB mixer at THz frequencies |
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Conference Article |
| Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Issue |
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Pages |
47-50 |
| Keywords |
NbN HEB mixers |
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| Address |
Charlottesville, Virginia |
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no |
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1601 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Issue |
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Pages |
163-166 |
| Keywords |
S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Ekström, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
| Title |
Phonon cooled ultra thin NbN hot electron bolometer mixers at 620 GHz |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
29-35 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have measured the noise performance and gain bandwidth of 35 A thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. A double-sideband receiver noise temperature less than 1300 K has been obtained with a 3 dB bandwidth of GHz. The gain bandwidth is 3.2 GHz. A lower noise temperature of 1100 K has been achieved with an improved set-up. The mixer output noise dominated by thermal fluctuations is about 50-60 K, and the SSB receiver and intrinsic conversion gain is about -18 and -12 dB, respectively. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
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1604 |
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Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Svechnikov, S. I.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M. |
| Title |
NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
258-271 |
| Keywords |
NbN HEB mixers |
| Abstract |
We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups. |
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1605 |
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Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. |
| Title |
Hot electron mixers for THz applications |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 30th ESLAB |
Abbreviated Journal |
Proc. 30th ESLAB |
| Volume |
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Issue |
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Pages |
207-210 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K. |
| Address |
Noordwijk, Netherlands |
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Rolfe, E. J.; Pilbratt, G. |
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Submillimetre and Far-Infrared Space Instrumentation |
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no |
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Serial |
1606 |
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| Author |
Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B. |
| Title |
Performance of NbN lattice‐cooled hot‐electron bolometric mixers |
Type |
Journal Article |
| Year |
1996 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
80 |
Issue |
7 |
Pages |
4232-4234 |
| Keywords |
NbN HEB mixers |
| Abstract |
The heterodyne performance of lattice‐cooled hot‐electron bolometric mixers is measured at 200 GHz. Superconducting thin‐film niobium nitride strips with ∼5 nm thickness are used as waveguide mixer elements. A double‐sideband receiver noise temperature of 750 K at 244 GHz is measured at an intermediate frequency centered at 1.5 GHz with 500 MHz bandwidth and with 4.2 K device temperature. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator power required by the mixer is about 0.5 μW. The mixer is linear to within 1 dB up to an input power level 6 dB below the local oscillator power. A receiver incorporating a hot‐electron bolometric mixer was used to detect molecular line emission in a laboratory gascell. This experiment unambiguously confirms that the receiver noise temperature determined from Y‐factor measurements reflects the true heterodyne sensitivity. |
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0021-8979 |
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no |
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1607 |
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| Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
| Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
Type |
Journal Article |
| Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
64 |
Issue |
5 |
Pages |
404-409 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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Place of Publication |
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Original Title |
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| Series Editor |
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Edition |
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| ISSN |
0021-3640 |
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| Notes |
http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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| Call Number |
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Serial |
1608 |
| Permanent link to this record |
