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Zhang, W., Miao, W., Zhong, J. Q., Shi, S. C., Hayton, D. J., Vercruyssen, N., et al. (2013). Temperature dependence of superconducting hot electron bolometers. In Not published results: 24th international symposium on space terahertz technology.
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Cherednichenko, S., Yagoubov, P., Il'in, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers. In Proc. 27th Eur. Microwave Conf. (Vol. 2, pp. 972–977). IEEE.
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Trifonov, A., Tong, C. - Y. E., Grimes, P., Lobanov, Y., Kaurova, N., Blundell, R., et al. (2017). Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver. In IEEE Trans. Appl. Supercond. (Vol. 27, 6).
Abstract: We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide,
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Lobanov, Y. V., Shcherbatenko, M. L., Semenov, A. V., Kovalyuk, V. V., Korneev, A. A., Goltsman, G. N., et al. (2017). Heterodyne spectroscopy with superconducting single-photon detector. In EPJ Web Conf. (Vol. 132, 01005).
Abstract: We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length.
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Korneeva, Y., Florya, I., Vdovichev, S., Moshkova, M., Simonov, N., Kaurova, N., et al. (2017). Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption. In IEEE Transactions on Applied Superconductivity (Vol. 27, 5).
Abstract: In superconducting single-photon detectors SSPD
the efficiency of local suppression of superconductivity and hotspot
formation is controlled by diffusivity and electron-phonon
interaction time. Here we selected a material, 3.6-nm-thick MoNx
film, which features diffusivity close to those of NbN traditionally
used for SSPD fabrication, but with electron-phonon interaction
time an order of magnitude larger. In MoNx detectors we study
the dependence of detection efficiency on bias current, photon
energy, and strip width and compare it with NbN SSPD. We
observe non-linear current-energy dependence in MoNx SSPD
and more pronounced plateaus in dependences of detection
efficiency on bias current which we attribute to longer electronphonon
interaction time.
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Elezov, M. S., Ozhegov, R. V., Goltsman, G. N., & Makarov, V. (2017). Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system. In EPJ Web of Conferences (Vol. 132, 2).
Abstract: Recently bright-light control of the SSPD has been
demonstrated. This attack employed a “backdoor†in the detector biasing
scheme. Under bright-light illumination, SSPD becomes resistive and
remains “latched†in the resistive state even when the light is switched off.
While the SSPD is latched, Eve can simulate SSPD single-photon response
by sending strong light pulses, thus deceiving Bob. We developed the
experimental setup for investigation of a dependence on latching threshold
of SSPD on optical pulse length and peak power. By knowing latching
threshold it is possible to understand essential requirements for
development countermeasures against blinding attack on quantum key
distribution system with SSPDs.
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Shcherbatenko, M., Lobanov, Y., Semenov, A., Kovalyuk, V., Korneev, A., Ozhegov, R., et al. (2017). Coherent detection of weak signals with superconducting nanowire single photon detector at the telecommunication wavelength. In I. Prochazka, R. Sobolewski, & R. B. James (Eds.), Proc. SPIE (Vol. 10229, 0G (1 to 12)). Spie.
Abstract: Achievement of the ultimate sensitivity along with a high spectral resolution is one of the frequently addressed problems, as the complication of the applied and fundamental scientific tasks being explored is growing up gradually. In our work, we have investigated performance of a superconducting nanowire photon-counting detector operating in the coherent mode for detection of weak signals at the telecommunication wavelength. Quantum-noise limited sensitivity of the detector was ensured by the nature of the photon-counting detection and restricted by the quantum efficiency of the detector only. Spectral resolution given by the heterodyne technique and was defined by the linewidth and stability of the Local Oscillator (LO). Response bandwidth was found to coincide with the detector’s pulse width, which, in turn, could be controlled by the nanowire length. In addition, the system noise bandwidth was shown to be governed by the electronics/lab equipment, and the detector noise bandwidth is predicted to depend on its jitter. As have been demonstrated, a very small amount of the LO power (of the order of a few picowatts down to hundreds of femtowatts) was required for sufficient detection of the test signal, and eventual optimization could lead to further reduction of the LO power required, which would perfectly suit for the foreseen development of receiver matrices and the need for detection of ultra-low signals at a level of less-than-one-photon per second.
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Seleznev, V. A., Divochiy, A. V., Vakhtomin, Y. B., Morozov, P. V., Zolotov, P. I., Vasil'ev, D. D., et al. (2016). Superconducting detector of IR single-photons based on thin WSi films. In J. Phys.: Conf. Ser. (Vol. 737, 012032).
Abstract: We have developed the deposition technology of WSi thin films 4 to 9 nm thick with high temperature values of superconducting transition (Tc~4 K). Based on deposed films there were produced nanostructures with indicative planar sizes ~100 nm, and the research revealed that even on nanoscale the films possess of high critical temperature values of the superconducting transition (Tc~3.3-3.7 K) which certifies high quality and homogeneity of the films created. The first experiments on creating superconducting single-photon detectors showed that the detectors' SDE (system detection efficiency) with increasing bias current (I b) reaches a constant value of ~30% (for X=1.55 micron) defined by infrared radiation absorption by the superconducting structure. To enhance radiation absorption by the superconductor there were created detectors with cavity structures which demonstrated a practically constant value of quantum efficiency >65% for bias currents Ib>0.6-Ic. The minimal dark counts level (DC) made 1 s-1 limited with background noise. Hence WSi is the most promising material for creating single-photon detectors with record SDE/DC ratio and noise equivalent power (NEP).
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Goltsman, G. N., Samartsev, V. V., Vinogradov, E. A., Naumov, A. V., & Karimullin, K. R. (2015). New generation of superconducting nanowire single-photon detectors. In EPJ Web of Conferences (Vol. 103, 01006 (1 to 2)).
Abstract: We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs) that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.
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Korneev, A., Golt'sman, G., & Pernice, W. (2015). Photonic integration meets single-photon detection (Vol. 51).
Abstract: By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications.
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