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Koshelets, V. P., Ermakov, A. B., Filippenko, L. V., Koryukin, O. V., Khudchenko, A. V., Sobolev, A. S., et al. (2006). Superconducting submm integrated receiver for TELIS. In J. Phys.: Conf. Ser. (Vol. 43, pp. 1377–1380).
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Yagoubov, P., Hoogeveen, R., Torgashin, M., Khudchenko, A., Koshelets, V., Suttiwong, N., et al. (2006). 550-650 GHz spectrometer development for TELIS. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 338–341).
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Murk, A., Kämpfer, N., Wylde, R., Inatani, J., Manabe, T., & Seta, M. (2001). Characterization of various quasi-optical components for the submillimeter limb-sounder SMILES. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 426–435).
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Finkel, M., Vachtomin, Y., Antipov, S., Drakinski, V., Kaurova, N., Voronov, B., et al. (2003). Gain bandwidth and noise temperature of NbTiN HEB mixer. In Proc. 14th Int. Symp. Space Terahertz Technol. (pp. 276–285).
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
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Korneev, A., Kouminov, P., Matvienko, V., Chulkova, G., Smirnov, K., Voronov, B., et al. (2004). Sensitivity and gigahertz counting performance of NbN superconducting single-photon detectors. Appl. Phys. Lett., 84(26), 5338–5340.
Abstract: We have measured the quantum efficiencysQEd, GHz counting rate, jitter, and noise-equivalentpowersNEPdof nanostructured NbN superconducting single-photon detectorssSSPDsdin thevisible to infrared radiation range. Our 3.5-nm-thick and 100- to 200-nm-wide meander-typedevices(total area 10310mm2), operating at 4.2 K, exhibit an experimental QE of up to 20% inthe visible range and,10% at 1.3 to 1.55mm wavelength and are potentially sensitive up tomidinfrareds,10mmdradiation. The SSPD counting rate was measured to be above 2 GHz withjitter,18 ps, independent of the wavelength. The devices’ NEP varies from,10−17W/Hz1/2for1.55mm photons to,10−20W/Hz1/2for visible radiation. Lowering the SSPD operatingtemperature to 2.3 K significantly enhanced its performance, by increasing the QE to,20% andlowering the NEP level to,3310−22W/Hz1/2, both measured at 1.26mm wavelength.
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