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Shitov, S. V.; Inatani, J.; Shan, W.-L.; Takeda, M; Wang, Z.; Uvarov, A. V.; Ermakov, A. B.; Uzawa, Y. |
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Measurement of emissivity of the ALMA antenna panel at 840 GHz using NbN-based heterodyne SIS receiver |
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Conference Article |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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263-266 |
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SIS mixer, reflection, emissivity, mirror, space telescope, space observatory |
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580 |
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Tol, J. van; Brunel, L.-C.; Wylde, R. J. |
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A quasioptical transient electron spin resonance spectrometer operating at 120 and 240 GHz |
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Journal Article |
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2005 |
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Rev. Sci. Instrum. |
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Rev. Sci. Instrum. |
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76 |
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7 |
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074101 (1 to 8) |
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Schottky, noise temperature |
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A new multifrequency quasioptical electron paramagnetic resonance (EPR) spectrometer is described. The superheterodyne design with Schottky diode mixer/detectors enables fast detection with subnanosecond time resolution. Optical access makes it suitable for transient EPR (TR-EPR) at 120 and 240 GHz. These high frequencies allow for an accurate determination of small g-tensor anisotropies as are encountered in excited triplet states of organic molecules like porphyrins and fullerenes. The measured concentration sensitivity for continuous-wave (cw) EPR at 240 GHz and at room temperature without cavity is 1013 spins/cm3 (15 nM) for a 1 mT linewidth and a 1 Hz bandwidth. With a Fabry-Perot cavity and a sample volume of 30 nl, the sensitivity at 240 GHz corresponds to [approximate]3×109 spins for a 1 mT linewidth. The spectrometer's performance is illustrated with applications of transient EPR of excited triplet states of organic molecules, as well as cw EPR of nitroxide reference systems and a thin film of a colossal magnetoresistance material. |
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Actually, noise spectral density is given (3e-19 W/Hz) |
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588 |
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Nagatsuma, T.; Hirata, A.; Sato, Y.; Yamaguchi, R.; Takahashi, H.; Kosugi, T.; Tokumitsu, M.; Sugahara, H.; Furuta, T.; Ito, H. |
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Sub-Terahertz Wireless Communications Technologies |
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Conference Article |
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2005 |
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Proc. 18th International Conference on Applied Electromagnetics and Communications (ICECom 2005) |
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1-4 |
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subterahartz terahertz THz communications |
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This paper presents a 10-Gb/s wireless link system that uses a 120-GHz-band sub-terahertz electro-magnetic waves. In the transmitter, photonic techniques are used for generation, modulation, and emission of the sub-THz signals, while the receiver is composed of all-electronic devices using InP-HEMTs. |
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593 |
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Nagatsuma, T.; Hirata, A.; Royter, Y.; Shinagawa, M.; Furuta, T.; Ishibashi, T.; Ito, H. |
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A 120-GHz integrated photonic transmitter |
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2000 |
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Proc. International topical meeting on microwave photonics (MWP 2000) |
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225 - 228 |
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THz, teraherts communications, terahertz communication channel, photodiode, transmitter |
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A photonics-based 120-GHz transmitter has been developed. A photodiode, a planar antenna and a silicon lens were integrated to form a compact millimeter-wave (MMW) emitter. The MMW signal emitted from the transmitter has been detected with a waveguide-mounted Schottky diode. The received power exceeded 100 μW, which is the highest value ever reported for photonic MMW transmitter at frequencies of >100 GHz |
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595 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
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Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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Journal Article |
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2010 |
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Физика и техника полупроводников |
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44 |
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11 |
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1475-1478 |
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2DEG, AlGaAs/GaAs heterostructures mixers |
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Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K. |
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Duplicated as 1216 |
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RPLAB @ gujma @ |
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702 |
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