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Yagubov, P., Gol'tsman, G., Voronov, B., Seidman, L., Siomash, V., Cherednichenko, S., et al. (1996). The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 290–302). Charlottesville, Virginia, USA.
Abstract: We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
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Ellison, B. N., Maddison, B. J., Matheson, D. N., Oldfield, M. L., Marazita, S., Crowe, T. W., et al. (1996). First results for a 2.5 THz Schottky diode waveguide mixer. In Proc. 7th Int. Symp. Space Terahertz Technol. (494). Charlottesville, Virginia, USA.
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Galin, I., Schnitzer, C. A., Dengler, R. J., & Quintero, O. (1999). 177–207 GHz radiometer front end, single–side–band measurements. In Proc. 10th Int. Symp. Space Terahertz Technol. (70). Charlottesville, Virginia, USA.
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Hesler, J. L., Hui, K., & Crowe, T. W. (1999). A fixed–tuned 400 GHz subharmonic mixer using planar Schottky diods. In Proc. 10th Int. Symp. Space Terahertz Technol. (95). Charlottesville, Virginia, USA.
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Treuttel, J., Thomas, B., Maestrini, A., Wang, H., Alderman, B., Siles, J. V., et al. (2009). A 380 GHz sub-harmonic mixer using MMIC foundry based Schottky diodes transferred onto quartz substrate. In Proc. 20th Int. Symp. Space Terahertz Technol.. Charlottesville, Virginia, USA.
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