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| Author | Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. | ||||
| Title | Carbon nanotubes as exceptional electrically driven on-chip light sources | Type | Miscellaneous | ||
| Year | 2016 | Publication  |
2Physics | Abbreviated Journal | 2Physics |
| Volume | Issue | Pages | |||
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique. |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2372-1782 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1219 | |||
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| Author | Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. | ||||
| Title | Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation | Type | Journal Article | ||
| Year | 2021 | Publication |
Adv. Electron. Mater. | Abbreviated Journal | Adv. Electron. Mater. |
| Volume | 7 | Issue | 3 | Pages | 2000872 |
| Keywords | SWCNT transistors | ||||
| Abstract | The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2199-160X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1843 | |||
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| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
| Year | 2013 | Publication |
Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
| Keywords | carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
| Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1171 | |||
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| Author | Fu, K.; Zannoni, R.; Chan, C.; Adams, S. H.; Nicholson, J.; Polizzi, E.; Yngvesson, K. S. | ||||
| Title | Terahertz detection in single wall carbon nanotubes | Type | Journal Article | ||
| Year | 2008 | Publication |
Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 92 | Issue | 3 | Pages | 033105 |
| Keywords | HEB, single wall, carbon nanotube, CNT, SWNT, SWCNT, terahertz detection, THz | ||||
| Abstract | It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | NEP is not shown | Approved | no | ||
| Call Number | Serial | 566 | |||
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| Author | Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. | ||||
| Title | Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers | Type | Journal Article | ||
| Year | 2017 | Publication |
Beilstein J. Nanotechnol. | Abbreviated Journal | Beilstein J. Nanotechnol. |
| Volume | 8 | Issue | Pages | 38-44 | |
| Keywords | carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials | ||||
| Abstract | Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources. | ||||
| Address | Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2190-4286 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:28144563; PMCID:PMC5238692 | Approved | no | ||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1109 | ||
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| Author | Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. | ||||
| Title | Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors | Type | Journal Article | ||
| Year | 2015 | Publication |
Carbon | Abbreviated Journal | Carbon |
| Volume | 87 | Issue | Pages | 330-337 | |
| Keywords | carbon nanotubes, CNT detectors, field effect transistors, FET | ||||
| Abstract | Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0008-6223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1778 | |||
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| Author | Gayduchenko, I. A.; Fedorov, G. E.; Ibragimov, R. A.; Stepanova, T. S.; Gazaliev, A. S.; Vysochanskiy, N. A.; Bobrov, Y. A.; Malovichko, A. M.; Sosnin, I. M.; Bobrinetskiy, I. I. | ||||
| Title | Synthesis of single-walled carbon nanotube networks using monodisperse metallic nanocatalysts encapsulated in reverse micelles | Type | Journal Article | ||
| Year | 2016 | Publication |
Chem. Ind. Belgrade | Abbreviated Journal | Chem. Ind. Belgrade |
| Volume | 70 | Issue | 1 | Pages | 1-8 |
| Keywords | carbon nanotubes, CNT, reverse micelles | ||||
| Abstract | We report on a method of synthesis of single-walled carbon nanotubes percolated networks on silicon dioxide substrates using monodisperse Co and Ni catalyst. The catalytic nanoparticles were obtained by modified method of reverse micelles of bis-(2-ethylhexyl) sulfosuccinate sodium in isooctane solution that provides the nanoparticle size control in range of 1 to 5 nm. The metallic nanoparticles of Ni and Co were characterized using transmission electron microscopy (TEM) and atomic-force microscopy (AFM). Carbon nanotubes were synthesized by chemical vapor deposition of CH4/H2 composition at temperature 1000 °С on catalysts pre-deposited on silicon dioxide substrate. Before temperature treatment during the carbon nanotube synthesis most of the catalyst material agglomerates due to magnetic forces while during the nanotube growth disintegrates into the separate nanoparticles with narrow diameter distribution. The formed nanotube networks were characterized using AFM, scanning electron microscopy (SEM) and Raman spectroscopy. We find that the nanotubes are mainly single-walled carbon nanotubes with high structural perfection up to 200 μm long with diameters from 1.3 to 1.7 nm consistent with catalyst nanoparticles diameter distribution and independent of its material. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0367-598X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1779 | |||
| Permanent link to this record | |||||
| Author | Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. | ||||
| Title | Amplification of a Raman scattering signal by carbon nanotubes | Type | Journal Article | ||
| Year | 2018 | Publication |
Dokl. Phys. | Abbreviated Journal | Dokl. Phys. |
| Volume | 63 | Issue | 12 | Pages | 496-498 |
| Keywords | carbon nanotubes, CNT, Raman scattering, RLS | ||||
| Abstract | The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1028-3358 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1775 | |||
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| Author | Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. | ||||
| Title | Response of carbon nanotube film transistor to the THz radiation | Type | Conference Article | ||
| Year | 2018 | Publication |
EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 195 | Issue | Pages | 05012 (1 to 2) | |
| Keywords | field-effect transistor, FET, carbon nanotube, CNT | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1317 | |||
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| Author | Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. | ||||
| Title | On chip carbon nanotube tunneling spectroscopy | Type | Journal Article | ||
| Year | 2020 | Publication |
Fullerenes, Nanotubes and Carbon Nanostructures | Abbreviated Journal | |
| Volume | 28 | Issue | 1 | Pages | 50-53 |
| Keywords | carbon nanotubes, CNT, scanning tunneling microscope, STM | ||||
| Abstract | We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. | ||||
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| Publisher | Taylor & Francis | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | doi:10.1080/1536383X.2019.1671365 | Serial | 1269 | ||
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| Author | Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. | ||||
| Title | Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation | Type | Journal Article | ||
| Year | 2015 | Publication |
J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 118 | Issue | 19 | Pages | 194303 |
| Keywords | terahertz detectors, asymmetric carbon nanotubes, CNT | ||||
| Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1169 | |||
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| Author | Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S. | ||||
| Title | Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection | Type | Journal Article | ||
| Year | 2016 | Publication |
J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 120 | Issue | 4 | Pages | 044501 (1 to 13) |
| Keywords | carbon nanotubes, CNT detectors, plasmons | ||||
| Abstract | We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures. | ||||
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| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1777 | |||
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| Author | Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. | ||||
| Title | Carbon nanotube based terahertz radiation detectors | Type | Conference Article | ||
| Year | 2019 | Publication |
J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012208 (1 to 5) | |
| Keywords | carbon nanotubes, CNT | ||||
| Abstract | In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1270 | |||
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| Author | Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. | ||||
| Title | Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes | Type | Conference Article | ||
| Year | 2018 | Publication |
J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051050 (1 to 5) | |
| Keywords | field-effect transistor, FET, carbon nanotube, CNT | ||||
| Abstract | In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1301 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. | ||||
| Title | Towards to the development of THz detectors based on carbon nanostructures | Type | Conference Article | ||
| Year | 2018 | Publication |
J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1092 | Issue | Pages | 012039 (1 to 4) | |
| Keywords | CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors | ||||
| Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1302 | |||
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