Manus, M. K. M., Kash, J. A., Steen, S. E., Polonsky, S., Tsang, J. C., Knebel, D. R., et al. (2000). PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis. Microelectronics Reliability, 40, 1353–1358.
Abstract: Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors.
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Miller, A. J., Lita, A. E., Calkins, B., Vayshenker, I., Gruber, S. M., & Nam, S. W. (2011). Compact cryogenic self-aligning fiber-to-detector coupling with losses below one percent. Opt. Express, 19(10), 9102–9110.
Abstract: We present a compact packaging technique for coupling light from a single-mode telecommunication fiber to cryogenic single-photon sensitive devices. Our single-photon detectors are superconducting transition-edge sensors (TESs) with a collection area only a factor of a few larger than the area of the fiber core which presents significant challenges to low-loss fiber-to-detector coupling. The coupling method presented here has low loss, cryogenic compatibility, easy and reproducible assembly and low component cost. The system efficiency of the packaged single-photon counting detectors is verified by the “triplet method†of power-source calibration along with the “multiple attenuator†method that produces a calibrated single-photon flux. These calibration techniques, when used in combination with through-wafer imaging and fiber back-reflection measurements, give us confidence that we have achieved coupling losses below 1 % for all devices packaged according to the self-alignment method presented in this paper.
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Steudle, G. A., Schietinger, S., Höckel, D., Dorenbos, S. N., Zadeh, I. E., Zwiller, V., et al. (2012). Measuring the quantum nature of light with a single source and a single detector. Phys. Rev. A, 86(5), 053814.
Abstract: An elementary experiment in optics consists of a light source and a detector. Yet, if the source generates nonclassical correlations such an experiment is capable of unambiguously demonstrating the quantum nature of light. We realized such an experiment with a defect center in diamond and a superconducting detector. Previous experiments relied on more complex setups, such as the Hanbury Brown and Twiss configuration, where a beam splitter directs light to two photodetectors, creating the false impression that the beam splitter is a fundamentally required element. As an additional benefit, our results provide a simplification of the widely used photon-correlation techniques.
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Gershenzon, E. M., Goltsman, G. N., & Orlov, L. (1976). Investigation of population and ionization of donor excited states in Ge. In Physics of Semiconductors (pp. 631–634). North-Holland Publishing Co.
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Gorokhov, G., Bychanok, D., Gayduchenko, I., Rogov, Y., Zhukova, E., Zhukov, S., et al. (2020). THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites. Polymers (Basel), 12(12), 3037 (1 to 14).
Abstract: Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed.
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Stellari, F., & Song, P. (2005). Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD). In Proc. 12th IPFA (2). IEEE.
Abstract: In F. Stellari and P. Song (2004) the authors have shown a comparison among different detectors used for diagnosing integrated circuits (ICs) by means of the PICA method. In their experiments they used two versions of the SSPD detector (p-SSPD is a prototype version, while c-SSPD is the first commercially available generation of the detector as presented in W. K. Lo et al. (2002), as well as the imaging detector (S-25 photo-multiplier tube (PMT) as discussed in W. G. McMullan (1987)) used in the conventional PICA technique. A microprocessor chip fabricated in a 0.13 μm 1.2 V technology is used to show that c-SSPD provides a significant reduction in acquisition time for the collection of optical waveforms from chips running at very low. In this paper, the authors summarize the main results.
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Shcherbatenko, M., Lobanov, Y., Finkel, M., Maslennikov, S., Pentin, I., Semenov, A., et al. (2014). Development of a 30 THz heterodyne receiver based on a hot-electron-bolometer mixer. In Proc. 25th Int. Symp. Space Terahertz Technol. (122).
Abstract: We present new Hot-Electron-Bolometer (HEB) mixers designed for mid-IR spectroscopy targeting astrophysical and geophysical observations where high sensitivity and spectral resolution are required. The mixers are made of an ultrathin NbN film deposited on GaAs substrates. Two entirely different types of the devices have been fabricated. The first type is based on a direct radiation coupling concept and the mixing devices are shaped as squares of 5×5 μm 2 (which corresponds to the diffraction limit at the chosen wavelength) and 10×10 μm 2 (which was used to establish a possible influence of the contact pads on the radiation absorption). The second type utilizes a spiral antenna designed with HFSS. The fabrication and layout of the devices as well as the performance comparison will be presented. During the experiments, the HEB mixer was installed on the cold plate of a LHe cryostat. A germanium window and an extended semi-spherical germanium lens are used to couple the radiation. The cryostat is equipped with a germanium optical filter of thickness 0.5 mm and with a center wavelength of 10.6 mμ. The incident power absorption is measured by using the isothermal method. As a Local Oscillator, a 10.6 micrometers line of a CO2 gas laser is used. We further characterize the frequency response of the spiral antenna with a FIR-spectrometer. The noise characteristics of the mixers are determined from a room temperature cold load and a heated black body at ~600 K as a hot load.
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Titova, N., Kardakova, A., Tovpeko, N., Ryabchun, S., Mandal, S., Morozov, D., et al. (2017). Superconducting diamond films as perspective material for direct THz detectors. In Proc. 28th Int. Symp. Space Terahertz Technol. (82).
Abstract: Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013.
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Bell, M., Sergeev, A., Goltsman, G., Bird, J., & Verevkin, A. (2006). Transition-edge sensors based on superconducting nanowires. In Proc. APS March Meeting (B38.00001).
Abstract: We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well.
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Tretyakov, I., Shurakov, A., Perepelitsa, A., Kaurova, N., Svyatodukh, S., Zilberley, T., et al. (2019). Silicon room temperature IR detectors coated with Ag2S quantum dots. In Proc. IWQO (pp. 369–371).
Abstract: For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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