toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Korneev, A.; Kovalyuk, V.; An, P.; Golikov, A.; Zubkova, E.; Ferrari, S.; Kahl, O.; Pernice, W.; Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. url  doi
openurl 
  Title Superconducting single-photon detector for integrated waveguide spectrometer Type Conference Article
  Year 2018 Publication (up) EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 190 Issue Pages 04009  
  Keywords SSPD, SNSPD, Si3N4 waveguides, waveguide spectrometer  
  Abstract We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1199  
Permanent link to this record
 

 
Author Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. url  doi
openurl 
  Title Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films Type Journal Article
  Year 2015 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 1-4  
  Keywords TiN MKID  
  Abstract We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1296  
Permanent link to this record
 

 
Author Kooi, J. W.; Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Dieleman, P.; Baryshev, A.; de Lange, G. url  doi
openurl 
  Title IF impedance and mixer gain of NbN hot electron bolometers Type Journal Article
  Year 2007 Publication (up) J. Appl. Phys. Abbreviated Journal  
  Volume 101 Issue 4 Pages 044511  
  Keywords  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ s @ Serial 445  
Permanent link to this record
 

 
Author Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. url  doi
openurl 
  Title Investigating the detection regimes of a superconducting single-photon detector Type Journal Article
  Year 2013 Publication (up) J. Opt. Technol. Abbreviated Journal J. Opt. Technol.  
  Volume 80 Issue 7 Pages 435  
  Keywords SSPD, quantum efficiency  
  Abstract The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1070-9762 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1172  
Permanent link to this record
 

 
Author Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G. url  doi
openurl 
  Title Study of silicon nitride O-ring resonator for gas-sensing applications Type Conference Article
  Year 2020 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012124  
  Keywords silicon nitride O-ring resonator, ORR  
  Abstract In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1176  
Permanent link to this record
 

 
Author Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. doi  openurl
  Title Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform Type Conference Article
  Year 2017 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 917 Issue Pages 062042  
  Keywords Si3N4, Bragg waveguides  
  Abstract We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. These waveguides would serve as efficient notch-filters with the desired characteristics. Transmission spectra of the fabricated integrated notch filters have been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. Performance of the filters has been studied depending on different parameters, such as pitch, filling factor, and height of teeth of the Bragg grating  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1141  
Permanent link to this record
 

 
Author Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N. doi  openurl
  Title Optimisation of spontaneous four-wave mixing in a ring microcavity Type Conference Article
  Year 2017 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 47 Issue 10 Pages 887-891  
  Keywords ring microcavity  
  Abstract Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1142  
Permanent link to this record
 

 
Author Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G. url  doi
openurl 
  Title Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit Type Conference Article
  Year 2020 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012135  
  Keywords silicon nitride O-ring resonator, ORR  
  Abstract In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1177  
Permanent link to this record
 

 
Author Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. url  doi
openurl 
  Title Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation Type Conference Article
  Year 2020 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012118  
  Keywords Mach-Zehnder interferometer, MZI  
  Abstract In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1178  
Permanent link to this record
 

 
Author Venediktov, I. O.; Elezov, M. S.; Prokhodtsov, A. I.; Kovalyuk, V. V.; An, P. P.; Golikov, A. D.; Shcherbatenko, M. L.; Sych, D. V.; Goltsman, G. N. url  doi
openurl 
  Title Study of microheater’s phase modulation for on-chip Kennedy receiver Type Conference Article
  Year 2020 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012117  
  Keywords Mach-Zehnder interferometers, MZI  
  Abstract In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1179  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: