|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
2002 |
Mater. Sci. Forum |
384-3 |
107-116 |
|
|
Kawano, Yukio; Ishibashi, Koji |
An on-chip near-field terahertz probe and detector |
2008 |
Nature Photonics |
2 |
618-621 |
|
|
Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. |
Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes |
1985 |
Phys. B+C |
134 |
174-178 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
1996 |
Phys. Rev. B Condens. Matter. |
53 |
R7592-R7595 |
|
|
Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
Energy-loss rates for hot electrons and holes in GaAs quantum wells |
1985 |
Phys. Rev. Lett. |
54 |
2045-2048 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
55-58 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
163-166 |
|
|
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
2010 |
Semicond. |
44 |
1427-1429 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
1996 |
Surface Science |
361-362 |
569-573 |
|