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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
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Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
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2013 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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103 |
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18 |
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181121 (1 to 5) |
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Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate |
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Abstract |
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
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0003-6951 |
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1171 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
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Title |
Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
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Journal Article |
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Year |
2007 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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91 |
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6 |
Pages |
062504 (1 to 3) |
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Keywords |
NbN films, nanofilms |
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The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. |
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Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers |
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2001 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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79 |
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15 |
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2483-2485 |
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Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. |
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Low noise superconducting single photon detectors on silicon |
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Journal Article |
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2008 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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93 |
Issue |
13 |
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131101 |
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436 |
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Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
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Resistive transition of niobium superconducting hot-electron bolometer mixers |
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1998 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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73 |
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19 |
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2826 |
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HEB |
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