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Author Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W. url  doi
openurl 
  Title NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers Type Conference Article
  Year 1999 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 3828 Issue Pages 410-416  
  Keywords NbN HEB mixers  
  Abstract We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Chamberlain, J.M.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Terahertz Spectroscopy and Applications II  
  Notes Approved no  
  Call Number Serial 1477  
Permanent link to this record
 
 
Author Huebers, H.-W.; Semenov, A.; Schubert, J.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Krabbe, A.; Roeser, H.-P. url  doi
openurl 
  Title NbN hot-electron bolometer as THz mixer for SOFIA Type Conference Article
  Year 2000 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 4014 Issue Pages 195-202  
  Keywords NbN HEB mixers, airborne, stratospheric observatory, SOFIA  
  Abstract Heterodyne receivers for applications in astronomy need quantum limited sensitivity. We have investigated phonon- cooled NbN hot electron bolometric mixers in the frequency range from 0.7 THz to 5.2 THz. The devices were 3.5 nm thin films with an in-plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The best measured DSB receiver noise temperatures are 1300 K (0.7 THz), 2000 K (1.4 THz), 2100 K (1.6 THz), 2600 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz), and 8800 K (5.2 THz). The sensitivity fluctuation, the long term stability, and the antenna pattern were measured. The results demonstrate that this mixer is very well suited for GREAT, the German heterodyne receiver for SOFIA.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Melugin, R.K.; Roeser, H.-P.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Airborne Telescope Systems  
  Notes Approved no  
  Call Number Serial 1554  
Permanent link to this record
 
 
Author Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. url  doi
openurl 
  Title Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN Type Conference Article
  Year 1999 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 3795 Issue Pages 357-368  
  Keywords NbN HEB mixers  
  Abstract We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Hwu, R.J.; Wu, K.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Terahertz and Gigahertz Photonics  
  Notes Approved no  
  Call Number Serial 1561  
Permanent link to this record
 
 
Author Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films Type Conference Article
  Year 1994 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 2160 Issue Pages 74-82  
  Keywords YBCO HTS switches  
  Abstract We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Superconductive Devices and Circuits  
  Notes Approved no  
  Call Number Serial 1638  
Permanent link to this record
 
 
Author Gol’tsman, G. N.; Kouminov, P. B.; Goghidze, I. G.; Karasik, B. S.; Gershenzon, E. M. url  doi
openurl 
  Title Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states Type Conference Article
  Year 1994 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 2159 Issue Pages 81-86  
  Keywords YBCO HTS HEB, nonbolornetric  
  Abstract The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Nahum, M.; Villegier, J.-C.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference High-Temperature Superconducting Detectors: Bolometric and Nonbolometric  
  Notes Approved no  
  Call Number Serial 1641  
Permanent link to this record
 
 
Author Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title High speed hot-electron superconducting bolometer Type Conference Article
  Year 1993 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 2104 Issue Pages 181-182  
  Keywords NbN HEb, Nb, Al  
  Abstract Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Birch, J.R.; Parker, T.J.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves  
  Notes Approved no  
  Call Number Serial 1652  
Permanent link to this record
 
 
Author Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. url  doi
openurl 
  Title Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films Type Conference Article
  Year 1993 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 2104 Issue Pages 183-184  
  Keywords YBCO HTS HEB detectors  
  Abstract Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Birch, J.R.; Parker, T.J.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves  
  Notes https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 Approved no  
  Call Number 10.1117/12.2298489 Serial 1653  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N. url  doi
openurl 
  Title Hot-electron superconducting mixers Type Conference Article
  Year 1993 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 2104 Issue Pages 329-330  
  Keywords  
  Abstract The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Birch, J.R.; Parker, T.J.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 18th International Conference on Infrared and Millimeter Waves  
  Notes Approved no  
  Call Number Serial 1654  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches Type Conference Article
  Year 1992 Publication (up) Progress in High Temperature Superconductivity Abbreviated Journal Progress in High Temperature Superconductivity  
  Volume 32 Issue Pages 190-195  
  Keywords superconducting films, heating of electrons  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991  
  Notes https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8 Approved no  
  Call Number Serial 1666  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title Heating of electrons in superconductor in the resistive state due to electromagnetic radiation Type Journal Article
  Year 1984 Publication (up) Solid State Communications Abbreviated Journal Solid State Communications  
  Volume 50 Issue 3 Pages 207-212  
  Keywords Nb HEB  
  Abstract The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1709  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation Type Journal Article
  Year 1990 Publication (up) Solid State Communications Abbreviated Journal Solid State Communications  
  Volume 76 Issue 4 Pages 493-497  
  Keywords YBCO HTS detectors  
  Abstract The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1685  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. url  doi
openurl 
  Title Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction Type Journal Article
  Year 1990 Publication (up) Solid State Communications Abbreviated Journal Solid State Communications  
  Volume 75 Issue 8 Pages 639-641  
  Keywords impure superconductors  
  Abstract Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1687  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. url  openurl
  Title Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state Type Journal Article
  Year 1988 Publication (up) Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.  
  Volume 14 Issue 7 Pages 414-420  
  Keywords HEB  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Duplicated as 1697 Approved no  
  Call Number Serial 236  
Permanent link to this record
 
 
Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. url  openurl
  Title Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure Type Journal Article
  Year 1989 Publication (up) Sov. Phys. and Technics of Semiconductors Abbreviated Journal Sov. Phys. and Technics of Semiconductors  
  Volume 23 Issue 8 Pages 843-846  
  Keywords Ge, crystallography  
  Abstract Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge Approved no  
  Call Number Serial 1692  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Electron-phonon interaction in ultrathin Nb films Type Journal Article
  Year 1990 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 70 Issue 3 Pages 505-511  
  Keywords Nb films  
  Abstract A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.

1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.		  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 241  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
  Year 1983 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 57 Issue 2 Pages 369-376  
  Keywords Ge, electron and hole binding  
  Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1711  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Heating of electrons in a superconductor in the resistive state by electromagnetic radiation Type Journal Article
  Year 1984 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 59 Issue 2 Pages 442-450  
  Keywords Nb HEB  
  Abstract The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 983  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. openurl 
  Title Character of submillimeter photoconductivity in n-lnSb Type Journal Article
  Year 1979 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 49 Issue 1 Pages 121-128  
  Keywords  
  Abstract A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 985  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. url  openurl
  Title Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
  Year 1986 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 64 Issue 4 Pages 889-897  
  Keywords Ge, trapping of free carriers  
  Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1707  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Population and lifetime of excited states of shallow impurities in Ge Type Journal Article
  Year 1979 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 49 Issue 2 Pages 355-362  
  Keywords Ge, photothermal ionization, shallow impurities  
  Abstract An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1719  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. url  openurl
  Title Capture of photoexcited carriers by shallow impurity centers in germanium Type Journal Article
  Year 1979 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 50 Issue 4 Pages 728-734  
  Keywords Ge, photoexcited carriers, shallow impurity centers  
  Abstract Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.  
  Address  
  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1720  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
  Year 1977 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 4 Pages 769-776  
  Keywords p-Ge, photoconductivity, energy spectrum, magnetic field  
  Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1727  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. url  openurl
  Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
  Year 1977 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 3 Pages 555-565  
  Keywords Ge, GaAs, magnetic field, donors, energy spectrum  
  Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.  
  Address  
  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1728  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
  Year 1976 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 43 Issue 1 Pages 116-122  
  Keywords Ge, free excitons  
  Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1731  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Submillimeter spectroscopy of semiconductors Type Journal Article
  Year 1973 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 37 Issue 2 Pages 299-304  
  Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons  
  Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1735  
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. url  openurl
  Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
  Year 1975 Publication (up) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 40 Issue 2 Pages 311-315  
  Keywords Ge, cyclotron resonance  
  Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1768  
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Author Gershenzon, E. M.; Goltsman, G. N. url  openurl
  Title Zeeman effect in excited-states of donors in germanium Type Journal Article
  Year 1972 Publication (up) Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 6 Issue 3 Pages 509  
  Keywords Ge, donors, Zeeman effect  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1737  
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. url  openurl
  Title Effect of a strong magnetic field on the spectrum of donors in InSb Type Journal Article
  Year 1978 Publication (up) Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 11 Issue 12 Pages 1395-1397  
  Keywords InSb, spectrum of donors, strong magnetic field  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1725  
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. url  openurl
  Title Investigation of excited donor states in GaAs Type Journal Article
  Year 1974 Publication (up) Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 7 Issue 10 Pages 1248-1250  
  Keywords GaAs, excited donor states  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1733  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Observation of free carrier resonances in p-type germanium at submillimeter wavelengths Type Journal Article
  Year 1978 Publication (up) Sov. Phys. Solid State Abbreviated Journal Sov. Phys. Solid State  
  Volume 20 Issue 4 Pages 573-579  
  Keywords p-Ge, free carriers, resonances  
  Abstract The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1721  
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Author Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Limiting characteristic of fast superconducting bolometers Type Journal Article
  Year 1989 Publication (up) Sov. Phys.-Tech. Phys. Abbreviated Journal Sov. Phys.-Tech. Phys.  
  Volume 34 Issue Pages 195-199  
  Keywords HEB  
  Abstract Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes О предельных характеристиках быстродействующих серхпроводниковых болометров Approved no  
  Call Number Serial 237  
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. url  openurl
  Title Germanium hot-electron narrow-band detector Type Journal Article
  Year 1971 Publication (up) Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics  
  Volume 16 Issue 8 Pages 1346  
  Keywords Ge HEB detectors  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1741  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. url  openurl
  Title Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state Type Journal Article
  Year 1990 Publication (up) Sov. Supercond. Abbreviated Journal Sov. Supercond.  
  Volume 3 Issue 10 Pages 1582-1597  
  Keywords HEB mixers  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 240  
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Author Gol'tsman, G. N.; Semenov, A. D.; Gousev, Y. P.; Zorin, M. A.; Gogidze, I. G.; Gershenzon, E. M.; Lang, P. T.; Knott, W. J.; Renk, K. F. url  doi
openurl 
  Title Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light Type Journal Article
  Year 1991 Publication (up) Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 4 Issue 9 Pages 453-456  
  Keywords NbN HEB detectors  
  Abstract The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 242  
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Author Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. url  doi
openurl 
  Title A fast infrared detector based on patterned YBCO thin film Type Journal Article
  Year 1994 Publication (up) Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 7 Issue 5 Pages 321-323  
  Keywords YBCO HTS detector  
  Abstract Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.  
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  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1646  
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Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions Type Journal Article
  Year 1996 Publication (up) Surface Science Abbreviated Journal Surface Science  
  Volume 361-362 Issue Pages 569-573  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1609  
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Author Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. url  openurl
  Title Superconductive properties of ultrathin NbN films on different substrates Type Journal Article
  Year 1994 Publication (up) Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 7 Issue 6 Pages 1097-1102  
  Keywords NbN films  
  Abstract A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.  
  Address  
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  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0131-5366 ISBN Medium  
  Area Expedition Conference  
  Notes Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках Approved no  
  Call Number Serial 1631  
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Author Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D. url  openurl
  Title Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light Type Journal Article
  Year 1992 Publication (up) Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 5 Issue 5 Pages 955-960  
  Keywords NbN HEB detectors  
  Abstract Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0131-5366 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1670  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V. url  openurl
  Title Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials Type Journal Article
  Year 1992 Publication (up) Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 5 Issue 6 Pages 1129-1140  
  Keywords IR HEB detectors  
  Abstract Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0131-5366 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1673  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. url  openurl
  Title S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation Type Journal Article
  Year 1992 Publication (up) Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 5 Issue 12 Pages 2386-2402  
  Keywords YBCO HTS switches  
  Abstract A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0131-5366 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1674  
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Author Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. url  openurl
  Title Low energy excitation in La2CuO4 Type Journal Article
  Year 1990 Publication (up) Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 3 Issue 5 Pages 832-837  
  Keywords metal-dielectric-La2CuO4, monocrystals  
  Abstract Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1688  
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Author Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride Type Journal Article
  Year 1997 Publication (up) Tech. Phys. Lett. Abbreviated Journal Tech. Phys. Lett.  
  Volume 23 Issue 6 Pages 486-488  
  Keywords NbN KID  
  Abstract A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7850 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1593  
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Author Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Limiting characteristics of fast-response superconducting bolometers Type Journal Article
  Year 1989 Publication (up) Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Zhurnal Tekhnicheskoi Fiziki  
  Volume 59 Issue 2 Pages 11-120  
  Keywords HEB  
  Abstract Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электрон­ного болометра и обычных болометров различных типов.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1696  
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