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Author Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A.
Title Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation Type Conference Article
Year 1994 Publication (up) Council on Low-temp. Phys. Abbreviated Journal Council on Low-temp. Phys.
Volume Issue Pages 82-83
Keywords YBCO HTS HEB
Abstract
Address Dubna
Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994
Notes Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности Approved no
Call Number Serial 1632
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Author Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V.
Title Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films Type Conference Article
Year 1996 Publication (up) Czech J. Phys. Abbreviated Journal Czech J. Phys.
Volume 46 Issue S5 Pages 2489-2490
Keywords Al, Be, Nb films
Abstract The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0011-4626 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1767
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Author Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity Type Conference Article
Year 1996 Publication (up) Czech. J. Phys. Abbreviated Journal Czech. J. Phys.
Volume 46 Issue S2 Pages 857-858
Keywords NbC films
Abstract Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0011-4626 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1617
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Author Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E.
Title Amplification of a Raman scattering signal by carbon nanotubes Type Journal Article
Year 2018 Publication (up) Dokl. Phys. Abbreviated Journal Dokl. Phys.
Volume 63 Issue 12 Pages 496-498
Keywords carbon nanotubes, CNT, Raman scattering, RLS
Abstract The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1028-3358 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1775
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Author Fedder, H.; Oesterwind, S.; Wick, M.; Olbrich, F.; Michler, P.; Veigel, T.; Berroth, M.; Schlagmüller, M.
Title Characterization of electro-optical devices with low jitter single photon detectors – towards an optical sampling oscilloscope beyond 100 GHz Type Conference Article
Year 2018 Publication (up) ECOC Abbreviated Journal
Volume Issue Pages 1-3
Keywords SSPD, SNSPD, SPAD
Abstract We showcase an optical random sampling scope that exploits single photon counting and apply it to characterize optical transceivers. We study single photon detectors with a jitter down to 40 ps. The method can be extended beyond 100 GHz.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 8535415 Serial 1198
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