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Blagosklonskaya, L. E., Gershenzon, E. M., Gol'tsman, G. N., & Elant'ev, A. I. (1977). Effect of a high magnetic field on the spectrum of donors in InSb. Fizika i Tekhnika Poluprovodnikov, 11(12), 2373–2375.
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Gershenzon, E. M., Gol'tsman, G. N., Elant'ev, A. I., Karasik, B. S., & Potoskuev, S. E. (1988). Intense electromagnetic radiation heating of superconductor electrons in resistive state. Fizika Nizkikh Temperatur, 14(7), 753–763.
Abstract: An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
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Minaeva, O., Fraine, A., Korneev, A., Divochiy, A., Goltsman, G., & Sergienko, A. (2012). High resolution optical time-domain reflectometry using superconducting single-photon detectors. In Frontiers in Opt. 2012/Laser Sci. XXVIII (Fw3a.39). Optical Society of America.
Abstract: We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs.
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Matyushkin, Y., Kaurova, N., Voronov, B., Goltsman, G., & Fedorov, G. (2020). On chip carbon nanotube tunneling spectroscopy. Fullerenes, Nanotubes and Carbon Nanostructures, 28(1), 50–53.
Abstract: We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes.
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Matyushkin, Y., Fedorov, G., Moskotin, M., Danilov, S., Ganichev, S., & Goltsman, G. (2020). Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors. In Graphene and 2dm Virt. Conf..
Abstract: Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464.
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