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| Author |
Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range |
Type |
Conference Article |
| Year |
1998 |
Publication  |
Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
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Issue |
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Pages |
18-20 |
| Keywords |
NbN HEB mixers |
| Abstract |
We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz. |
| Address |
Leeds, UK |
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IEEE |
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0-7803-4903-2 |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1581 |
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| Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E. |
| Title |
Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies |
Type |
Conference Article |
| Year |
1998 |
Publication |
Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
| Volume |
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Issue |
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Pages |
149-152 |
| Keywords |
NbN HEB mixers |
| Abstract |
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB. |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1582 |
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| Author |
Semenov, A.; Richter, H.; Hübers, H.-W.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
| Title |
Development of terahertz superconducting hot-electron bolometer mixers |
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Conference Article |
| Year |
2003 |
Publication |
Proc. 6th European Conf. Appl. Supercond. |
Abbreviated Journal |
Proc. 6th European Conf. Appl. Supercond. |
| Volume |
181 |
Issue |
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Pages |
2960-2965 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present recent results of the development of phonon cooled hot-electron bolometric (HEB) mixers for airborne and balloon borne terahertz heterodyne receivers. Three iomportant issues have been addresses: the quality of NbN films the HEB mixers were made from, the spectral properties of the HEB mixers and the local oscillator power required for optical operation. Studies with an atomic force microscope indicate, that the performance of the HEB mixer might have been effected by the microstructure of the NbN film. Antenna gain and noise temperature were investigated at terahertz frequencies for a HEB embedded in either log-spiral or twin-slot feed antenna. Comparison suggests that at frequencies above 3 THz the spiral feed provides better overall performance. At 1.6 THz, a power of 2.5 µW was required from the local oscillator for optimal operation of the HEB mixer. |
| Address |
Sorrento, Italy |
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0750309814, 978-0750309813 |
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no |
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Serial |
1505 |
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| Author |
Okunev, 0.; Dzardranov, A.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Performances of hot—electron superconducting mixer for frequencies less than the gap energy: NbN mixer for 100 GHz operation |
Type |
Conference Article |
| Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
247-253 |
| Keywords |
NbN HEB mixers |
| Abstract |
The possibilities to improve the parameters of the 100 GHz NbN HEB superconducting waveguide mixers have been studied. The device consists of a signal strip 1 gm wide by 2 Am long made of 40 A thick NbN film. The best operation point was found at 5 K, where the mixer bandwidth made up 1.5-2 GHz and the total loss diminished down to 8 dB. The critical current density has been increased up to " 40 6 A/cm 2 , the noise temperature of the receiver (DSB) has reduced down to 450 K and the local oscillator power has decreased down to -.4).1 mcV. |
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no |
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1625 |
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| Author |
Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B. |
| Title |
NbN hot-electron mixer measurements at 200 GHz |
Type |
Conference Article |
| Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
254-261 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present noise and gain measurements of resistively driven NbN hot-electron mixers near 200 GHz. The device geometry is chosen so that the dominant cooling process of the hot-electrons is their interaction with the lattice. Except for a single batch, the intermediate frequency cut-off of these mixer elements is – 3 700 MHz, and has shown little variation among other batches of devices. At 100 MHz we measured intrinsic mixer losses as low as —3 dB. We measured the noise temperatures at several intermediate frequencies, and for the best de- vice at 137 MHz with 20 MHz bandwidth, we measured 2000 K; using a low-noise first- stage amplifier at 1.5 GHz with 200 MHz bandwidth, the receiver noise temperature measured 2800 K. We estimate that the noise contribution from the mixer is 500 K and the total losses are —15 dB at 137 MHz. |
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no |
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1626 |
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| Author |
Gol'tsman, G. N.; Karasik, B. S.; Svechnikov, S. I.; Gershenzon, E. M.; Ekström, H.; Kollberg E. |
| Title |
Noise temperature of NbN hot—electron quasioptical superconducting mixer in 200-700 GHz range |
Type |
Abstract |
| Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
268 |
| Keywords |
NbN HEB mixers, noise temperature |
| Abstract |
The electron heating effect in superconducting films is becoming very attractive for the development of THz range mixers because of the absence of frequency limitations inherent in the bolometric mechanism. However, the evidence for the spectral dependence of the position of optimal operating point has been found recently for NbN thin film devices 1.2 • The effect is presumably attributed to the variation in the absorption of radiation depending on the frequency. Since the resistive state is not spatially uniform the coupling efficiency of the mixer device with radiation can be different for frequencies larger than Zeilh and those smaller than 2Alh (d is the effective superconducting gap in the resistive state). To study the effect more thoroughly we have investigated the noise temperature of quasioptical NbN mixer device with broken hue tapered slot antenna in the frequency range 200-700 GHz. The device consists of several (5-10) parallel strips 1 jim wide and 6-7 tun thick made from NbN film on Si0 2 -Si 3 N 4 -Si membrane. The strips are connected with the gold contacts of the slot-line antenna which serves both as bias and IF leads. We used backward wave oscillators as LO sources and a standard hot/cold load technique for noise temperature measurements. The frequency dependence of noise temperature is mainly determined by two factors: frequency properties of the antenna and frequency dependence of the NbN film impedance. To separate both factors we monitored the frequency dependence of the device responsivity in the detector mode at a higher temperature within the superconducting transition where the impedance of NbN film is close to its normal resistance. In this case the impedance of the device itself is frequency independent. The experimental results will be reported at the Symposium. 1. G. Gollsman, S. Jacobsson, H. EkstrOm, B. Karasik, E. Kollberg, and E. Gershenzon, “Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation,” Proc of the 5th Int. Symp. on Space Terahertz Technology, pp. 209-213a, May 10-12,1994. 2. B.S. Karasik, G.N. Gol i tsman, B.M. Voronov, S.I. Svechnikov, E.M. Gershenzon, H. Ekstrom, S. Jacobsson, E. Kollberg, and K.S. Yngvesson, “Hot electron quasioptical NbN superconducting mixer,” presented at the ASC94, submitted to IEEE Trans. on Appl. Superconductivity. |
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1627 |
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Ekström, H.; Karasik, B.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E. |
| Title |
350 GHz NbN hot electron bolometer mixer |
Type |
Conference Article |
| Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
269-283 |
| Keywords |
NbN HEB mixers |
| Abstract |
Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling. |
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1628 |
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Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength |
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Conference Article |
| Year |
1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
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Pages |
284-293 |
| Keywords |
NbN HEB mixers, detectors |
| Abstract |
We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future. |
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1629 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
| Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
290-302 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B. |
| Title |
Superconductive NbN hot-electron bolometric mixer performance at 250 GHz |
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Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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Pages |
331-336 |
| Keywords |
NbN HEB mixers |
| Abstract |
Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity. |
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