| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
| Year |
1971 |
Publication  |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
2 |
Pages |
63-65 |
| Keywords |
Ge, donors, excited states |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1740 |
| Permanent link to this record |
| |
|
| |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
| Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
6 |
Pages |
241 |
| Keywords |
Ge, gamma irradiation, defects, impurities |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1742 |
| Permanent link to this record |
| |
|
| |
| Author |
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
| Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
Type |
Journal Article |
| Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
| Volume |
73 |
Issue |
1 |
Pages |
44-47 |
| Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
| Abstract |
The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0021-3640 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1752 |
| Permanent link to this record |
| |
|
| |
| Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
| Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
| Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
22 |
Issue |
4 |
Pages |
95-97 |
| Keywords |
Ge, impurities, excited states, absorption spectra |
| Abstract |
|
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1773 |
| Permanent link to this record |
| |
|
| |
| Author |
Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
| Title |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
Type |
Journal Article |
| Year |
1995 |
Publication |
JETP |
Abbreviated Journal |
JETP |
| Volume |
80 |
Issue |
5 |
Pages |
960-964 |
| Keywords |
|
| Abstract |
The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
RPLAB @ phisix @ |
Serial |
989 |
| Permanent link to this record |
| |
|
| |
| Author |
Zorin, M.; Lindgren, M.; Danerud, M.; Karasik, B.; Winkler, D.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation |
Type |
Journal Article |
| Year |
1995 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
| Volume |
8 |
Issue |
1 |
Pages |
11-15 |
| Keywords |
YBCO HTS HEB |
| Abstract |
Picosecond nonequilibrium and slow bolometric responses to infrared radiation from a patterned high-T c superconducting (HTS) film in resistive and normal states deposited onto LaAlO3, NdGaO3, and MgO substrates were investigated using both pulse and modulation techniques. The response time of 35 ps to a laser pulse of 17 ps FWHM has been observed. The intrinsic response time of the fast process is expected to be about a few picoseconds. The modulation technique, being free from the disadvantages of pulse methods (poor sensitivity, limited dynamic range), makes the detailed study of a number of relaxation processes possible. Besides the nonequilibrium response, two kinds of bolometric processes, namely phonon transport through the film-substrate interface and phonon thermal diffusion in a substrate, manifest themselves in certain frequency dependences. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0896-1107 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1630 |
| Permanent link to this record |
| |
|
| |
| Author |
Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
| Title |
Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
| Volume |
7 |
Issue |
4 |
Pages |
751-755 |
| Keywords |
YBCO HTS detector, nonequilibrium response |
| Abstract |
The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0896-1107 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1636 |
| Permanent link to this record |
| |
|
| |
| Author |
Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E. |
| Title |
Heat transfer in YBaCuO thin film/sapphire substrate system |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
341-344 |
| Keywords |
YBCO films |
| Abstract |
The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
0896-1107 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
1647 |
| Permanent link to this record |
| |
|
| |
| Author |
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
| Title |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
Type |
Journal Article |
| Year |
1996 |
Publication |
J. of Communications Technology and Electronics |
Abbreviated Journal |
J. of Communications Technology and Electronics |
| Volume |
41 |
Issue |
5 |
Pages |
408-414 |
| Keywords |
submillimeter waves, transmission |
| Abstract |
A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
1064-2269 |
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
Радиотехника и электроника 41, no. 4 (1996): 441-447 |
Approved |
no |
| Call Number |
|
Serial |
1611 |
| Permanent link to this record |
| |
|
| |
| Author |
Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
| Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
Type |
Journal Article |
| Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
75 |
Issue |
7 |
Pages |
3695-3697 |
| Keywords |
NbN HEB |
| Abstract |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
| Address |
|
| Corporate Author |
|
Thesis |
|
| Publisher |
|
Place of Publication |
|
Editor |
|
| Language |
|
Summary Language |
|
Original Title |
|
| Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
| Series Volume |
|
Series Issue |
|
Edition |
|
| ISSN |
|
ISBN |
|
Medium |
|
| Area |
|
Expedition |
|
Conference |
|
| Notes |
|
Approved |
no |
| Call Number |
|
Serial |
252 |
| Permanent link to this record |
