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Author |
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
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Title |
Population of excited-states of small admixtures in germanium |
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Conference Article |
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Year |
1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Volume |
42 |
Issue |
6 |
Pages |
1154-1159 |
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Keywords |
Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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Author |
Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. |
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Title |
Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors |
Type |
Conference Article |
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Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Volume |
42 |
Issue |
6 |
Pages |
1231-1234 |
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Keywords |
spectrum, semiconductors, admixtures, strong magnetic-field |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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blagosklonskaya1978effect |
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1724 |
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Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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Conference Article |
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2019 |
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IRMMW-THz |
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Ag2S quantum dots |
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A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. |
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2162-2035 |
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978-1-5386-8285-2 |
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8874267 |
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1286 |
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Author |
Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. |
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Title |
Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps |
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Conference Article |
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Year |
2016 |
Publication |
Integrated Optics: Devices, Mat. Technol. XX |
Abbreviated Journal |
Integrated Optics: Devices, Mat. Technol. XX |
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Volume |
9750 |
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135-142 |
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Keywords |
SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter |
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Abstract |
We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps). |
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Spie |
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Broquin, J.-E.; Conti, G.N. |
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1210 |
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Author |
Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G. |
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Title |
Input bandwidth of hot electron bolometer with spiral antenna |
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Journal Article |
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Year |
2012 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
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Volume |
2 |
Issue |
4 |
Pages |
400-405 |
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Keywords |
NbN HEB bolometers bandwidth, log-spiral antenna |
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We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device. |
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2156-342X |
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1161 |
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