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Author Sergeev, A. V.; Livanov, D. V. url  doi
openurl 
  Title Phonon renormalization of thermoelectric power of high-Tc materials Type Conference Article
  Year 1993 Publication (up) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences  
  Volume 112 Issue Pages 204-205  
  Keywords HTS, YBCO  
  Abstract Renormalization of thermoelectric power due to Nielsen — Taylor effect (interference between electron-phonon and electron- impurity interactions) is used for the explanation of the temperature dependence and sign of the thermopower in high-Tc materials. In the framework of the model the negative sign of TEP of untwinned YBa2Cu3O7−x crystal in a-direction observed by Howson et. al. is connected to the strong hole scattering via O-vacancies in chains.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992  
  Notes Approved no  
  Call Number Serial 1664  
Permanent link to this record
 
 
Author Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M. url  doi
openurl 
  Title Thermal boundary resistance at YBaCuO film-substrate interface Type Conference Article
  Year 1993 Publication (up) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences  
  Volume 112 Issue Pages 405-406  
  Keywords YBCO films  
  Abstract The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992  
  Notes Approved no  
  Call Number Serial 1665  
Permanent link to this record
 
 
Author Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. url  openurl
  Title Investigation of population and ionization of donor excited states in Ge Type Conference Article
  Year 1976 Publication (up) Physics of Semiconductors Abbreviated Journal Physics of Semiconductors  
  Volume Issue Pages 631-634  
  Keywords Ge, donor excited states  
  Abstract  
  Address Amsterdam  
  Corporate Author Thesis  
  Publisher North-Holland Publishing Co. Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1732  
Permanent link to this record
 
 
Author Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. url  doi
openurl 
  Title Studying key principles for design and fabrication of silicon photonic-based beamforming networks Type Conference Article
  Year 2019 Publication (up) PIERS-Spring Abbreviated Journal PIERS-Spring  
  Volume Issue Pages 745-751  
  Keywords silicon photonics, TriPleX platform  
  Abstract In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 9017646 Serial 1186  
Permanent link to this record
 
 
Author Kaurova, N. S.; Finkel, M. I.; Maslennikov, S. N.; Vahtomin, Yu. B.; Antipov, S. V.; Smirnov, K. V.; Voronov, B. M.; Gol'tsman, G. N.; Ilyin, K. S. openurl 
  Title Submillimeter mixer based on YBa2Cu3O7-x thin film Type Conference Article
  Year 2004 Publication (up) Proc. 1-st conf. Fundamental problems of high temperature superconductivity Abbreviated Journal  
  Volume Issue Pages 291  
  Keywords HTS, HEB mixer  
  Abstract  
  Address Moscow-Zvenigorod  
  Corporate Author Thesis  
  Publisher Place of Publication Moscow-Zvenigorod Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 355  
Permanent link to this record
 
 
Author Cherednichenko, S.; Ronnung, F.; Gol'tsman, G.; Gershenzon, E.; Winkler, D. url  openurl
  Title YBa2Cu3O7-δ hot-electron bolometer with submicron dimensions Type Conference Article
  Year 1999 Publication (up) Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 181-189  
  Keywords YBCO HTS HEB mixers  
  Abstract Photoresponse of YBa2Cu3O7-δ hot-electron bolometers to modulated near-infrared radiation was studied at a modulation .frequenc y var y ing from 0.2 MHz to 2 GHz. Bolometers were _fabricated from a 50 12 M thick film and had in-plane areas of 10x10 , um 2 . 2x0.2 s um', 1x0.2 p.m', and 0.5x0.2 jim. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1572  
Permanent link to this record
 
 
Author Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. url  openurl
  Title Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz Type Conference Article
  Year 1999 Publication (up) Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 190-199  
  Keywords NbN HEB mixers  
  Abstract We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1573  
Permanent link to this record
 
 
Author Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. url  openurl
  Title Improved characteristics of NbN HEB mixers integrated with log-periodic antennas Type Conference Article
  Year 1999 Publication (up) Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 200-207  
  Keywords NbN HEB mixers  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1574  
Permanent link to this record
 
 
Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Schubert, J.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. url  openurl
  Title NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz Type Conference Article
  Year 1999 Publication (up) Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 238-246  
  Keywords NbN HEB mixers  
  Abstract The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1575  
Permanent link to this record
 
 
Author Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman url  openurl
  Title Characterization of the electron energy relaxation process in NbN hot-electron devices Type Conference Article
  Year 1999 Publication (up) Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 390-397  
  Keywords HEB mixers, SSPD, SNSPD, NbN films, Nb films  
  Abstract We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1576  
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