Wiechers, C., Lydersen, L., Wittmann, C., Elser, D., Skaar, J., Marquardt, C., et al. (2011). After-gate attack on a quantum cryptosystem. New J. Phys., 13(1), 14.
Abstract: We present a method to control the detection events in quantum key distribution systems that use gated single-photon detectors. We employ bright pulses as faked states, timed to arrive at the avalanche photodiodes outside the activation time. The attack can remain unnoticed, since the faked states do not increase the error rate per se. This allows for an intercept-resend attack, where an eavesdropper transfers her detection events to the legitimate receiver without causing any errors. As a side effect, afterpulses, originating from accumulated charge carriers in the detectors, increase the error rate. We have experimentally tested detectors of the system id3110 (Clavis2) from ID Quantique. We identify the parameter regime in which the attack is feasible despite the side effect. Furthermore, we outline how simple modifications in the implementation can make the device immune to this attack.
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Goltsman, G., Korneev, A., Izbenko, V., Smirnov, K., Kouminov, P., Voronov, B., et al. (2004). Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1-3), 527–529.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Verevkin, A., Williams, C., Gol’tsman, G. N., Sobolewski, R., & Gilbert, G. (2001). Single-photon superconducting detectors for practical high-speed quantum cryptography. Optical Society of America.
Abstract: We have developed an ultrafast superconducting single-photon detector with negligible dark counting rate. The detector is based on an ultrathin, submicron-wide NbN meander-type stripe and can detect individual photons in the visible to near-infrared wavelength range at a rate of at least 10 Gb/s. The above counting rate allows us to implement the NbN device to unconditionally secret quantum key distRochester, New Yorkribution in a practical, high-speed system using real-time Vernam enciphering.
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Rosfjord, K. M., Yang, J. K. W., Dauler, E. A., Kerman, A. J., Vikas Anant, Voronov, B. M., et al. (2006). Nanowire Single-photon detector with an integrated optical cavity and anti-reflection coating. Opt. Express, 14(2), 527–534.
Abstract: We have fabricated and tested superconducting single-photon detectors and demonstrated detection efficiencies of 57% at 1550-nm wavelength and 67% at 1064 nm. In addition to the peak detection efficiency, a median detection efficiency of 47.7% was measured over 132 devices at 1550 nm. These measurements were made at 1.8K, with each device biased to 97.5% of its critical current. The high detection efficiencies resulted from the addition of an optical cavity and anti-reflection coating to a nanowire photodetector, creating an integrated nanoelectrophotonic device with enhanced performance relative to the original device. Here, the testing apparatus and the fabrication process are presented. The detection efficiency of devices before and after the addition of optical elements is also reported.
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Ferrari, S., Kovalyuk, V., Hartmann, W., Vetter, A., Kahl, O., Lee, C., et al. (2017). Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors. Opt. Express, 25(8), 8739–8750.
Abstract: We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
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