Zorin, M., Lindgren, M., Danerud, M., Karasik, B., Winkler, D., Gol'tsman, G., et al. (1995). Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation. J. Supercond., 8(1), 11–15.
Abstract: Picosecond nonequilibrium and slow bolometric responses to infrared radiation from a patterned high-T c superconducting (HTS) film in resistive and normal states deposited onto LaAlO3, NdGaO3, and MgO substrates were investigated using both pulse and modulation techniques. The response time of 35 ps to a laser pulse of 17 ps FWHM has been observed. The intrinsic response time of the fast process is expected to be about a few picoseconds. The modulation technique, being free from the disadvantages of pulse methods (poor sensitivity, limited dynamic range), makes the detailed study of a number of relaxation processes possible. Besides the nonequilibrium response, two kinds of bolometric processes, namely phonon transport through the film-substrate interface and phonon thermal diffusion in a substrate, manifest themselves in certain frequency dependences.
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Gol'tsman, G. N., Goghidze, I. G., Kouminov, P. B., Karasik, B. S., Semenov, A. D., & Gershenzon, E. M. (1994). Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses. J. Supercond., 7(4), 751–755.
Abstract: The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
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Sergeev, A., Semenov, A., Trifonov, V., Karasik, B., Gol'tsman, G., & Gershenzon, E. (1994). Heat transfer in YBaCuO thin film/sapphire substrate system. J. Supercond., 7(2), 341–344.
Abstract: The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
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Somani, S., Kasapi, S., Wilsher, K., Lo, W., Sobolewski, R., & Gol’tsman, G. (2001). New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect. J. Vac. Sci. Technol. B, 19(6), 2766–2769.
Abstract: A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.
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Tuchak, A. N., Gol’tsman, G. N., Kitaeva, G. K., Penin, A. N., Seliverstov, S. V., Finkel, M. I., et al. (2012). Generation of nanosecond terahertz pulses by the optical rectification method. JETP Lett., 96(2), 94–97.
Abstract: The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.
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