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Author Tong, C. Y. E.; Blundell, R.; Paine, S.; Papa, D. C.; Kawamura, J.; Stern, J.; LeDuc, H. G. openurl 
  Title Design and characterization of a 250-350 GHz fixed-tuned superconductor-insulator-insulator receiver Type Journal Article
  Year 1996 Publication (down) IEEE Trans. Microw. Theory Techn. Abbreviated Journal  
  Volume 44 Issue 9 Pages 1548-1556  
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  Notes Approved no  
  Call Number Serial 273  
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Author Tong, C. Y. E.; Chen, L.; Blundell, R. openurl 
  Title Theory of distributed mixing and amplification in a superconductingquasi-particle nonlinear transmission line Type Journal Article
  Year 1997 Publication (down) IEEE Trans. Microw. Theory Techn. Abbreviated Journal  
  Volume 45 Issue 7 Pages 1086-1092  
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  Notes Approved no  
  Call Number Serial 274  
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Author Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Papa, D. C.; Hunter, T. R.; Paine, S. N.; Patt, F.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. url  doi
openurl 
  Title Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation Type Journal Article
  Year 2000 Publication (down) IEEE Trans. Microw. Theory Techn. Abbreviated Journal IEEE Trans. Microw. Theory Techn.  
  Volume 48 Issue 4 Pages 683-689  
  Keywords NbN HEB mixers, LO power, local oscillator power, saturation, linearity, dynamic range  
  Abstract In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.  
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  Series Volume Series Issue Edition  
  ISSN 0018-9480 ISBN Medium  
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  Notes Approved no  
  Call Number RPLAB @ lobanovyury @ Serial 573  
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Author Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. openurl 
  Title An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance Type Journal Article
  Year 2005 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal  
  Volume 15 Issue 2 Pages 472-475  
  Keywords HEB mixer  
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  Address  
  Corporate Author Thesis  
  Publisher IEEE Place of Publication Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 371  
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Author Kawamura, J. H.; Tong, C.-Y.E.; Blundell, R.; Cosmo Papa, D.; Hunter, T. R.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. url  doi
openurl 
  Title An 800 GHz NbN phonon-cooled hot-electron bolometer mixer receiver Type Journal Article
  Year 1999 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 9 Issue 2 Pages 3753-3756  
  Keywords NbN HEB mixers  
  Abstract We describe a heterodyne receiver developed for astronomical applications to operate in the 350 /spl mu/m atmospheric window. The waveguide receiver employs a superconductive NbN phonon-cooled hot-electron bolometer mixer. The double sideband receiver noise temperature closely follows 1 kGHz/sup -1/ across 780-870 GHz, with the intermediate frequency centered at 1.4 GHz. The conversion loss is about 15 dB. The receiver was installed for operation at the University of Arizona/Max Planck Institute for Radio Astronomy Submillimeter Telescope facility. The instrument was successfully used to conduct test observations of a number of celestial sources in a number of astronomically important spectral lines.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 288  
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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. doi  openurl
  Title Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
  Year 2003 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 13 Issue 2 Pages 164-167  
  Keywords NbN HEB mixer  
  Abstract In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.  
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  Notes Approved no  
  Call Number Serial 341  
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Author Lobanov, Y.V.; Tong, C.-Y.E.; Hedden, A.S.; Blundell, R.; Voronov, B.M.; Gol'tsman, G.N. doi  openurl
  Title Direct measurement of the gain and noise bandwidths of HEB mixers Type Journal Article
  Year 2011 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 21 Issue 3 Pages 645-648  
  Keywords waveguide NbN HEB mixers  
  Abstract The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 720  
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Author Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. url  doi
openurl 
  Title Probing the stability of HEB mixers with microwave injection Type Journal Article
  Year 2015 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 2300404 (1 to 4)  
  Keywords NbN HEB mixer, stability, Allan-variance  
  Abstract Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.  
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  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1355  
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Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. doi  openurl
  Title Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver Type Conference Article
  Year 2017 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue 4 Pages 6  
  Keywords Multi-pixel, HEB, silicon-on-insulator, horn array  
  Abstract We report on the development of a multi-pixel

Hot Electron Bolometer (HEB) receiver fabricated using

silicon membrane technology. The receiver comprises a

2 × 2 array of four HEB mixers, fabricated on a single

chip. The HEB mixer chip is based on a superconducting

NbN thin film deposited on top of the silicon-on-insulator

(SOI) substrate. The thicknesses of the device layer and

handling layer of the SOI substrate are 20 μm and 300 μm

respectively. The thickness of the device layer is chosen

such that it corresponds to a quarter-wave in silicon at

1.35 THz. The HEB mixer is integrated with a bow-tie

antenna structure, in turn designed for coupling to a

circular waveguide,
 
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  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1111  
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Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. url  doi
openurl 
  Title Development of a silicon membrane-based multipixel hot electron bolometer receiver Type Journal Article
  Year 2017 Publication (down) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue 4 Pages 1-5  
  Keywords Multi-pixel, NbN HEB, silicon-on-insulator, horn array  
  Abstract We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1324  
Permanent link to this record
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