Records |
Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
Type |
Journal Article |
Year |
1988 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
Volume |
22 |
Issue |
3 |
Pages |
540-543 |
Keywords |
Ge, free holes, capture |
Abstract |
Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
Russian |
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
Approved |
no |
Call Number |
|
Serial |
1698 |
Permanent link to this record |
|
|
|
Author |
Korneev, A. A.; Korneeva, Y. P.; Mikhailov, M. Yu.; Pershin, Y. P.; Semenov, A. V.; Vodolazov, D. Yu.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Yu.; Goltsman, G. N. |
Title |
Characterization of MoSi superconducting single-photon detectors in the magnetic field |
Type |
Journal Article |
Year |
2015 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
25 |
Issue |
3 |
Pages |
2200504 (1 to 4) |
Keywords |
SSPD, SNSPD |
Abstract |
We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
RPLAB @ akorneev @ KorneevIEEE2015 |
Serial |
991 |
Permanent link to this record |
|
|
|
Author |
Titova, N.; Kardakova, A. I.; Tovpeko, N.; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S. R.; Williams, O. A.; Goltsman, G. N.; Klapwijk, T. M. |
Title |
Slow electron–phonon cooling in superconducting diamond films |
Type |
Journal Article |
Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
27 |
Issue |
4 |
Pages |
1-4 |
Keywords |
superconducting diamond films, electron-phonon cooling |
Abstract |
We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1168 |
Permanent link to this record |
|
|
|
Author |
Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. |
Title |
Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN |
Type |
Journal Article |
Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
31 |
Issue |
5 |
Pages |
1-5 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1222 |
Permanent link to this record |
|
|
|
Author |
Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. |
Title |
Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films |
Type |
Journal Article |
Year |
2015 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
25 |
Issue |
3 |
Pages |
1-4 |
Keywords |
TiN MKID |
Abstract |
We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1296 |
Permanent link to this record |