Gousev, Y. P., Gol'tsman, G. N., Karasik, B. S., Gershenzon, E. M., Semenov, A. D., Barowski, H. S., et al. (1996). Quasioptical superconducting hot electron bolometer for submillmeter waves. Int. J. of Infrared and Millimeter Waves, 17(2), 317–331.
Abstract: We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated.
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Kroug, M., Yagoubov, P., Gol'tsman, G., & Kollberg, E. (1997). NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies. In Inst. Phys. Conf. Ser. (Vol. 1, pp. 405–408). Bristol.
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Schubert, J., Semenov, A., Hübers, H. - W., Gol'tsman, G., Schwaab, G., Voronov, B., et al. (1999). Broad-band terahertz NbN hot-electron bolometric mixer. In Inst. Phys. Conf. (Vol. 167, pp. 663–666).
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Hübers, H. - W., Schubert, J., Krabbe, A., Birk, M., Wagner, G., Semenov, A., et al. (2001). Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies. Infrared Physics & Technology, 42(1), 41–47.
Abstract: Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz.
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Gol'tsman, G. N. (1999). Hot electron bolometric mixers: new terahertz technology. Infrared Physics & Technology, 40(3), 199–206.
Abstract: This paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixers has crossed the level of 1 K GHz−1 at 430 GHz (410 K), 600–650 GHz (480 K), 750 GHz (600 K), 810 GHz (780 K) and is close to that level at 1.1 THz (1250 K) and 2.5 THz (4500 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and about 100 nW for mixers made by e-beam lithography. A waveguide version of 800 GHz receiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, AZ, to conduct astronomical observations of known submillimeter lines (CO, J=7→6, CI, J=2→1). It was proved that the receiver works as a practical instrument.
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Maezawa, H. (2015). Application of superconducting hot-electron bolometer mixers for terahertz-band astronomy. IEICE Trans. Electronics, 98(3), 196–206.
Abstract: Recently, a next-generation heterodyne mixer detector – a hot electron bolometer (HEB) mixer employing a superconducting microbridge – has gradually opened up terahertz-band astronomy. The surrounding state-of-the-art technologies including fabrication processes, 4 K cryostats, cryogenic low-noise amplifiers, local oscillator sources, micromachining techniques, and spectrometers, as well as the HEB mixers, have played a valuable role in the development of super-low-noise heterodyne spectroscopy systems for the terahertz band. The current developmental status of terahertz-band HEB mixer receivers and their applications for spectroscopy and astronomy with ground-based, airborne, and satellite telescopes are presented.
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Shurakov, A., Tong, C. -yu E., Grimes, P., Blundell, R., & Golt'sman, G. (2015). A microwave reflection readout scheme for hot electron bolometric direct detector. IEEE Trans. THz Sci. Technol., 5, 81–84.
Abstract: In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications.
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Klapwijk, T. M., & Semenov, A. V. (2017). Engineering physics of superconducting hot-electron bolometer mixers. IEEE Trans. THz Sci. Technol., 7(6), 627–648.
Abstract: Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments.
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Shurakov, A., Seliverstov, S., Kaurova, N., Finkel, M., Voronov, B., & Goltsman, G. (2012). Input bandwidth of hot electron bolometer with spiral antenna. IEEE Trans. THz Sci. Technol., 2(4), 400–405.
Abstract: We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device.
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Krause, S., Mityashkin, V., Antipov, S., Gol’tsman, G., Meledin, D., Desmaris, V., et al. (2017). Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers. IEEE Trans. Terahertz Sci. Technol., 7(1), 53–59.
Abstract: In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.
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