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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Schubert, J.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
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Title |
NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz |
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Year |
1999 |
Publication  |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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238-246 |
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NbN HEB mixers |
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The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported. |
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1575 |
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Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman |
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Title |
Characterization of the electron energy relaxation process in NbN hot-electron devices |
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Conference Article |
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Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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390-397 |
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HEB mixers, SSPD, SNSPD, NbN films, Nb films |
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We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. |
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1576 |
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Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E. |
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Title |
A high resolution spectrometer for the investigation of molecular structures in the THZ range |
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Conference Article |
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Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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530-538 |
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antireflection coatings, dielectric mirrors |
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A status report on the design study of a novel tunable far-infrared (TuFTR) spectrometer for the investigation of the structure of weakly bound molecular complexes is given. The goal is a sensitive TuFIR spectrometer with full frequency coverage from 1-6 THz. To hit the goal, advanced sources (e.g. p-Ge lasers) and detectors (e.g. superconducting hot electron bolometric (HEB) mixers) shall be employed to extend the technique of cavity ringdown spectroscopy, that is currently used at optical and infrared frequencies to the FIR spectral range. Critical for such a system are high-Q resonators that still allow good optical coupling, and wideband antireflection coatings to increase detector sensitivity and decrease optical path losses. 2 nd order effective media theory and an iterative multilayer algorithm have been employed to design wideband antireflection coatings for dielectrics with large dielectric constants like Ge or Si. Taking into account 6 layers, for Si bandwidths of 100% of the center frequency could be obtained with power reflectivities below 1% for both polarizations simultaneously. Wideband dielectric mirrors including absorption losses were also studied yielding a bandwidth of about 50% with reflectivities larger than 99.5%. |
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1577 |
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Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W. |
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Title |
NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers |
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Conference Article |
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1999 |
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Proc. SPIE |
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Proc. SPIE |
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3828 |
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410-416 |
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NbN HEB mixers |
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We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed. |
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Spie |
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Chamberlain, J.M. |
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Terahertz Spectroscopy and Applications II |
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1477 |
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Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN |
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Conference Article |
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1999 |
Publication |
Proc. SPIE |
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Proc. SPIE |
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Volume |
3795 |
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357-368 |
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NbN HEB mixers |
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We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible. |
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SPIE |
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Hwu, R.J.; Wu, K. |
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Terahertz and Gigahertz Photonics |
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1561 |
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Vystavkin, A. N. |
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Estimation of noise equivalent power and design analysis of an andreev reflection hot-electron microbolometer for submillimeter radioastronomy |
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Journal Article |
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1999 |
Publication |
Rus. J. Radio Electron. |
Abbreviated Journal |
Rus. J. Radio Electron. |
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10 |
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HEB, detector, bolometer |
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Results of theoretical estimations and measurements of characteristics of an Andreev reflection hot-electron microbolometer for submillimeter radioastronomy made by different researchers are reviewed and analysed. Peculiarities and characteristics of the microbolometers using two types of microthermometer for measurement of the electron temperature increment under influence of the radiation: the SIN-junction and the transition-edge sensor (TES) with electrothermal feedback – are compared. Advantages of the microbolometer with the second type of the microthermometer when the TES is used simultaneously as the absorber of radiation are shown. Methods of achievement of the best noise equivalent power of the microbolometer in such version as well as methods of the matching the microbolometer with the incident radiation flow using planar antennas and with the channel of output signal measurement using a SQUID-picoammeter are considered. |
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496 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
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1999 |
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Semicond. |
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Semicond. |
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33 |
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5 |
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551-554 |
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2DEG, AlGaAs/GaAs heterostructures |
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The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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1063-7826 |
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1571 |
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Yagoubov, Pavel; Kroug, Matthias; Merkel, Harald; Kollberg, Erik; Schubert, Josef; Hübers, Heinz-Wilhelm |
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NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz |
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Journal Article |
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1999 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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12 |
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11 |
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989-991 |
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NbN HEB mixers |
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The performance of NbN-based phonon-cooled hot electron bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1-0.2 µm; the width is 1-2 µm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power requirement is less than 500 nW at the receiver input. First results on spiral antenna polarization measurements are reported. |
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0953-2048 |
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295 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz |
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1999 |
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Supercond. Sci. Technol. |
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12 |
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11 |
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748-750 |
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NbN HEB mixers |
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We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz). |
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298 |
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Il'in, K. S.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
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Infrared hot-electron NbN superconducting photodetectors for imaging applications |
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1999 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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12 |
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11 |
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755-758 |
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NbN SSPD, SNSPD |
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We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits. |
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0953-2048 |
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