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Author |
Title |
Year |
Publication  |
DOI |
Links |
|
|
Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses |
1994 |
J. Supercond. |
10.1007/BF00721658 |
|
|
|
Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E. |
Heat transfer in YBaCuO thin film/sapphire substrate system |
1994 |
J. Supercond. |
10.1007/BF00724565 |
|
|
|
Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. |
New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect |
2001 |
J. Vac. Sci. Technol. B |
10.1116/1.1412899 |
|
|
|
Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
1995 |
JETP |
|
|
|
|
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
Generation of nanosecond terahertz pulses by the optical rectification method |
2012 |
JETP Lett. |
10.1134/S0021364012140123 |
|
|
|
Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
Universal bottleneck for thermal relaxation in disordered metallic films |
2020 |
JETP Lett. |
10.1134/S0021364020020034 |
|
|
|
Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
10.1134/1.1434290 |
|
|
|
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
10.1134/1.568271 |
|
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
10.1134/1.567211 |
|
|
|
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
1995 |
JETP Lett. |
|
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