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Author Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. url  doi
openurl 
  Title Picosecond hot-electron energy relaxation in NbN superconducting photodetectors Type Journal Article
  Year 2000 Publication (down) Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 76 Issue 19 Pages 2752-2754  
  Keywords NbN HEB detectors, two-temperature model, IF bandwidth  
  Abstract We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect.  
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  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 856  
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Author Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. openurl 
  Title Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer Type Journal Article
  Year 2005 Publication (down) Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 86 Issue Pages 244104 (1 to 3)  
  Keywords HEB, QCL  
  Abstract We report the first demonstration of an all solid-stateheterodyne receiver that can be used for high-resolution spectroscopy above 2THz suitable for space-based observatories. The receiver uses a NbN superconducting hot-electron bolometer as mixer and a quantum cascade laser operating at 2.8THz as local oscillator. We measure a double sideband receiver noise temperature of 1400K at 2.8THz and 4.2K, and find that the free-running QCL has sufficient power stability for a practical receiver, demonstrating an unprecedented combination of sensitivity and stability.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 905  
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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. url  doi
openurl 
  Title Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Journal Article
  Year 1998 Publication (down) Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 73 Issue 19 Pages 2814-2816  
  Keywords NbN HEB mixers, noise temperature, local oscillator power  
  Abstract In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW.  
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  Notes Approved no  
  Call Number Serial 911  
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Author Miao, W.; Zhang, W.; Zhong, J. Q.; Shi, S. C.; Delorme, Y.; Lefevre, R.; Feret, A; Vacelet, T url  doi
openurl 
  Title Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges Type Journal Article
  Year 2014 Publication (down) Appl. Phys. Lett. Abbreviated Journal <ef><bf><bc>Appl. Phys. Lett.  
  Volume 104 Issue Pages 052605(1-4)  
  Keywords NbN HEB mixers, local oscillator power, RF nonuniform absorption  
  Abstract We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.  
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  Notes Approved no  
  Call Number Serial 935  
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Author Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. doi  openurl
  Title Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers Type Journal Article
  Year 2016 Publication (down) Appl. Phys. Lett. Abbreviated Journal  
  Volume 109 Issue 13 Pages 132602  
  Keywords HEB mixer, contacts  
  Abstract We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1107  
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