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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
Year 1971 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 5 Pages 185-186
Keywords Ge, Si, neutral impurity atom, binding energy
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Call Number Serial 1739
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Transitions of electrons between excited states of donors in germanium Type Journal Article
Year 1971 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 2 Pages 63-65
Keywords Ge, donors, excited states
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Call Number Serial 1740
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
Year 1971 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 6 Pages 241
Keywords Ge, gamma irradiation, defects, impurities
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Call Number Serial 1742
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M.
Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
Year 2001 Publication (up) Jetp Lett. Abbreviated Journal Jetp Lett.
Volume 73 Issue 1 Pages 44-47
Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field
Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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ISSN 0021-3640 ISBN Medium
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Notes Approved no
Call Number Serial 1752
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G.
Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
Year 1975 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 22 Issue 4 Pages 95-97
Keywords Ge, impurities, excited states, absorption spectra
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Call Number Serial 1773
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Author Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K.
Title Superconducting single-photon detectors made of ultra-thin VN films Type Conference Article
Year 2018 Publication (up) KnE Energy Abbreviated Journal KnE Energy
Volume 3 Issue 3 Pages 83-89
Keywords
Abstract We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I
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Call Number Serial 1230
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Author Korneev, Alexander; Golt'sman, Gregory; Pernice, Wolfram
Title Photonic integration meets single-photon detection Type Miscellaneous
Year 2015 Publication (up) Laser Focus World Abbreviated Journal Laser Focus World
Volume 51 Issue 5 Pages 47-50
Keywords optical waveguide SSPD, SNSPD
Abstract By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications.
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Call Number RPLAB @ akorneev @ Serial 1126
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Author Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G.
Title Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity Type Journal Article
Year 2014 Publication (up) Laser Phys. Lett. Abbreviated Journal
Volume 11 Issue 1 Pages 015004 (1 to 4)
Keywords HEB applications, HEB detector applications, short THz pulses detection
Abstract We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics.
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Call Number Serial 1076
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Author Florya, I. N.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Goltsman, G. N.
Title Photon counting statistics of superconducting single-photon detectors made of a three-layer WSi film Type Journal Article
Year 2018 Publication (up) Low Temp. Phys. Abbreviated Journal Low Temp. Phys.
Volume 44 Issue 3 Pages 221-225
Keywords WSi SSPD, SNSPD
Abstract Superconducting nanowire single-photon detectors (SNSPD) are used in quantum optics when record-breaking time resolution, high speed, and exceptionally low levels of dark counts (false readings) are required. Their detection efficiency is limited, however, by the absorption coefficient of the ultrathin superconducting film for the detected radiation. One possible way of increasing the detector absorption without limiting its broadband response is to make a detector in the form of several vertically stacked layers and connect them in parallel. For the first time we have studied single-photon detection in a multilayer structure consisting of three superconducting layers of amorphous tungsten silicide (WSi) separated by thin layers of amorphous silicon. Two operating modes of the detector are illustrated: an avalanche regime and an arm-trigger regime. A shift in these modes occurs at currents of ∼0.5–0.6 times the critical current of the detector.

This work was supported by technical task No. 88 for scientific research at the National Research University “Higher School of Economics,” Grant No. 14.V25.31.0007 from the Ministry of Education and Science of Russia, and the work of G. N. Goltsman was supported by task No. 3.7328.2017/VU of the Ministry of Education and Science of Russia.
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ISSN 1063-777X ISBN Medium
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Notes Approved no
Call Number Serial 1310
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Author Goltsman, G. N.; Shcherbatenko, M. L.; Lobanov, Y. V.; Kovalyuk, V. V.; Kahl, O.; Ferrari, S.; Korneev, A.; Pernice, W. H. P.
Title Superconducting nanowire single photon detector for coherent detection of weak optical signals Type Abstract
Year 2016 Publication (up) LPHYS'16 Abbreviated Journal LPHYS'16
Volume Issue Pages 1-2
Keywords SSPD, SNSPD
Abstract Traditionally, photon detectors are operated in a direct detection mode counting incident photonswith a known quantum efficiency. This procedure allows one to detect weak sources of radiation but allthe information about its frequency is limited by the optical filtering/resonating structures used which arenot as precise as would be required for some practical applications. In this work we propose heterodynereceiver based on a photon counting mixer which would combine excellent sensitivity of a photon countingdetector and excellent spectral resolution given by the heterodyne technique. At present, Superconducting-Nanowire-Single-Photon-Detectors (SNSPDs) [1] are widely used in a variety of applications providing thebest possible combination of the sensitivity and speed. SNSPDs demonstrate lack of drawbacks like highdark count rate or autopulsing, which are common for traditional semiconductor-based photon detectors,such as avalanche photon diodes.In our study we have investigated SNSPD operated as a photon counting mixer. To fully understandits behavior in such a regime, we have utilized experimental setup based on a couple of distributedfeedback lasers irradiating at 1.5 micrometers, one of which is being the Local Oscillator (LO) and theother mimics the test signal [2]. The SNSPD was operated in the current mode and the bias currentwas slightly below of the critical current. Advantageously, we have found that LO power needed for anoptimal mixing is of the order of hundreds of femtowatts to a few picowatts, which is promising for manypractical applications, such as receiver matrices [3]. With use of the two lasers, one can observe thevoltage pulses produced by the detected photons, and the time distribution of the pulses reproduces thefrequency difference between the lasers, forming power response at the intermediate frequency which canbe captured by either an oscilloscope (an analysis of the pulse statistics is needed) or by an RF spectrumanalyzer. Photon-counting nature of the detector ensures quantum-limited sensitivity with respect to theoptical coupling achieved. In addition to the chip SNSPD with normal incidence coupling, we use thedetectors with a travelling wave geometry design [4]. In this case a NbN nanowire is placed on the topof a Si3N4 nanophotonic waveguide, thus increasing the efficient interaction length. For this reason it ispossible to achieve almost complete absorption of photons and reduce the detector footprint. This reducesthe noise of the device together with the expansion of the bandwidth. Integrated device scheme allowsus to measure the optical losses with high accuracy. Our approach is fully scalable and, along with alarge number of devices integrated on a single chip can be adapted to the mid and far IR ranges wherephoton-counting measurement may be beneficial as well [5].Acknowledgements: This work was supported in part by the Ministry of Education and Science of theRussian Federation, contract No. 14.B25.31.0007 and by RFBR grant No. 16-32-00465.
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Notes Approved no
Call Number Serial 1220
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