Records |
Author |
Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M. |
Title |
Thermal boundary resistance at YBaCuO film-substrate interface |
Type |
Conference Article |
Year |
1993 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Abbreviated Journal |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Volume |
112 |
Issue |
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Pages |
405-406 |
Keywords |
YBCO films |
Abstract |
The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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1665 |
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Author |
Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
Title |
Electron-phonon interaction in disordered NbN films |
Type |
Journal Article |
Year |
1994 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
Volume |
194-196 |
Issue |
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Pages |
1355-1356 |
Keywords |
NbN films |
Abstract |
Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films. |
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0921-4526 |
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1649 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
Type |
Journal Article |
Year |
1991 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
Volume |
169 |
Issue |
1-4 |
Pages |
629-630 |
Keywords |
impure superconductors |
Abstract |
Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals. |
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0921-4526 |
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1682 |
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Author |
Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M. |
Title |
AC losses and submillimeter absorption in single crystals La2CuO4 |
Type |
Journal Article |
Year |
1990 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
Volume |
165-166 |
Issue |
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Pages |
1269-1270 |
Keywords |
metal-dielectric-La2Cu04 |
Abstract |
The La2CuO4 single crystals were used to carry out the measurements of transmission spectra within the submillimeter range of wavelengths, as well as the capacitance C and conductivity G in the region of acoustic frequencies of the metal-dielectric-La2Cu04 system at low temperatures. The optical spectra display a threshold character. There takes place a sharp decreasing of transmission signal in the energy range of hυ>1.5meV. The C(ω,T) and G(ω,T) dependences have a universal form characteristic of relaxation processes of the Debye type. The relaxation time dependence displays a thermoactivation character τ(T)-exp(ξ/T) with a gap value of ξ≃2meV,coinciding with the optical one. It is assumed that there exist excitations with a characteristic energy ~ 2meV in La2Cu04.A possible nature of the revealed low-energy excitations is discussed. |
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0921-4526 |
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1686 |
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Author |
Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. |
Title |
Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes |
Type |
Journal Article |
Year |
1985 |
Publication ![sorted by Publication field, ascending order (up)](img/sort_asc.gif) |
Phys. B+C |
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Volume |
134 |
Issue |
1-3 |
Pages |
174-178 |
Keywords |
2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
Abstract |
The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented. |
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634 |
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