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Author Polyakova, M. I.; Florya, I. N.; Semenov, A. V.; Korneev, A. A.; Goltsman, G. N.
Title Extracting hot-spot correlation length from SNSPD tomography data Type Conference Article
Year 2019 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1410 Issue Pages 012166 (1 to 4)
Keywords SSPD, SNSPD, quantum detector tomography, QDT
Abstract We present data of quantum detector tomography for the samples specifically optimized for this problem. Using this method, we take results of hot-spot correlation length of 17 ± 2 nm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1273
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Author Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
Title Towards to the development of THz detectors based on carbon nanostructures Type Conference Article
Year 2018 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1092 Issue Pages 012039 (1 to 4)
Keywords CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors
Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1302
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Author Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N.
Title Attojoule energy resolution of direct detector based on hot electron bolometer Type Conference Article
Year 2016 Publication (up) J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 741 Issue Pages 012165 (1 to 5)
Keywords NbN HEB detector
Abstract We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses.
Address
Corporate Author Thesis
Publisher IOP Publishing Place of Publication Editor
Language Summary Language Original Title
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ISSN ISBN Medium
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Notes Approved no
Call Number Seliverstov_2016 Serial 1337
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Author Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
Title Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses Type Journal Article
Year 1994 Publication (up) J. Supercond. Abbreviated Journal J. Supercond.
Volume 7 Issue 4 Pages 751-755
Keywords YBCO HTS detector, nonequilibrium response
Abstract The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0896-1107 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1636
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.
Title Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum Type Journal Article
Year 1987 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 46 Issue 5 Pages 237-238
Keywords YBCO HTS detectors
Abstract For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.
Address
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Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number Serial 1703
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Author Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G.
Title Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity Type Journal Article
Year 2014 Publication (up) Laser Phys. Lett. Abbreviated Journal
Volume 11 Issue 1 Pages 015004 (1 to 4)
Keywords HEB applications, HEB detector applications, short THz pulses detection
Abstract We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics.
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Notes Approved no
Call Number Serial 1076
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Author Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V.
Title On-Chip Single Plasmon Detection Type Journal Article
Year 2010 Publication (up) Nano Letters Abbreviated Journal Nano Lett.
Volume 10 Issue Pages 661-664
Keywords optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics
Abstract Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected.
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Notes Approved no
Call Number RPLAB @ akorneev @ Serial 620
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Author Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector Type Journal Article
Year 2020 Publication (up) Nanomaterials (Basel) Abbreviated Journal Nanomaterials (Basel)
Volume 10 Issue 5 Pages 1-12
Keywords detector; quantum dots; short-wave infrared range; silicon
Abstract In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
Address Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2079-4991 ISBN Medium
Area Expedition Conference
Notes PMID:32365694; PMCID:PMC7712218 Approved no
Call Number Serial 1151
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Author Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried
Title Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers Type Journal Article
Year 2011 Publication (up) Nanoscale Research Letters Abbreviated Journal Nanoscale res lett
Volume 6 Issue 1 Pages 6
Keywords Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes
Abstract Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 712
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Author Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M.
Title Sensitivity of a superconducting nanowire detector for single ions at low energy Type Journal Article
Year 2012 Publication (up) Nanotechnol. Abbreviated Journal Nanotechnol.
Volume 23 Issue 6 Pages 065501 (1 to 5)
Keywords NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID
Abstract We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles.
Address Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria
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Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0957-4484 ISBN Medium
Area Expedition Conference
Notes PMID:22248823 Approved no
Call Number Serial 1380
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Author Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P.
Title Fully integrated quantum photonic circuit with an electrically driven light source Type Journal Article
Year 2016 Publication (up) Nat. Photon. Abbreviated Journal Nat. Photon.
Volume 10 Issue 11 Pages 727-732
Keywords Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector
Abstract Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1105
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Author Kawano, Yukio; Ishibashi, Koji
Title An on-chip near-field terahertz probe and detector Type Journal Article
Year 2008 Publication (up) Nature Photonics Abbreviated Journal Nature Photon
Volume 2 Issue 10 Pages 618-621
Keywords single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications
Abstract The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1749-4885 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 570
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Author Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W.
Title Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors Type Journal Article
Year 2017 Publication (up) Opt. Express Abbreviated Journal Opt. Express
Volume 25 Issue 8 Pages 8739-8750
Keywords SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics
Abstract We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1118
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Author Zhang, Zijing; Zhang, Jianlong; Wu, Long; Zhang, Yong; Zhao, Yuan; Su, Jianzhong
Title Photon-counting chirped amplitude modulation lidar using a smart premixing method Type Journal Article
Year 2013 Publication (up) Opt. Lett. Abbreviated Journal Opt. Lett.
Volume 38 Issue 21 Pages 4389-4392
Keywords photon-counting detector, lidar, Geiger mode APD, Geiger mode lidar
Abstract We proposed a new premixing method for photon-counting chirped amplitude modulation lidar (PCCAML). Earlier studies used the counting results of the returned signal detected by a Geiger mode avalanche photodiode detector (Gm-APD) to mix with the reference signal, called the postmixing method. We use an alternative method known as the premixing method, in which the reference signal is used to directly modulate the sampling gate width of the Gm-APD, and the mixing of the returned signal and the reference signal is completed before the Gm-APD. This premixing method is more flexible and may perform better than the postmixing method in terms of signal-to-noise ratio by cutting down a separated mixer commonly used in the postmixing lidar system. Furthermore, this premixing method lowers the demand for the sampling frequency of the Gm-APD. It allows the use of a much wider modulation bandwidth to improve the range accuracy and resolution. To the best of our knowledge, this is the first report to use the premixing method in the PCCAML system, which will benefit future lidar applications.
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Notes Approved no
Call Number Serial 1006
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Author Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.
Title Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses Type Journal Article
Year 1993 Publication (up) Opt. Lett. Abbreviated Journal Opt. Lett.
Volume 18 Issue 2 Pages 96-97
Keywords YBCO HTS detectors
Abstract We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment.
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Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0146-9592 ISBN Medium
Area Expedition Conference
Notes PMID:19802049 Approved no
Call Number Serial 1660
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