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Author Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. openurl 
  Title Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer Type Journal Article
  Year 2005 Publication (up) Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 86 Issue Pages 244104 (1 to 3)  
  Keywords HEB, QCL  
  Abstract We report the first demonstration of an all solid-stateheterodyne receiver that can be used for high-resolution spectroscopy above 2THz suitable for space-based observatories. The receiver uses a NbN superconducting hot-electron bolometer as mixer and a quantum cascade laser operating at 2.8THz as local oscillator. We measure a double sideband receiver noise temperature of 1400K at 2.8THz and 4.2K, and find that the free-running QCL has sufficient power stability for a practical receiver, demonstrating an unprecedented combination of sensitivity and stability.  
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  Notes Approved no  
  Call Number Serial 905  
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Author Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. url  doi
openurl 
  Title Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate Type Journal Article
  Year 2007 Publication (up) Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 91 Issue 6 Pages 062504 (1 to 3)  
  Keywords NbN films, nanofilms  
  Abstract The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.

The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS.
 
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  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1425  
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Author Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. url  doi
openurl 
  Title Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers Type Journal Article
  Year 2001 Publication (up) Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 79 Issue 15 Pages 2483-2485  
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  Notes Approved no  
  Call Number Serial 311  
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Author Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. url  doi
openurl 
  Title Resistive transition of niobium superconducting hot-electron bolometer mixers Type Journal Article
  Year 1998 Publication (up) Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 73 Issue 19 Pages 2826  
  Keywords HEB  
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  Notes Approved no  
  Call Number Serial 543  
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Author Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. openurl 
  Title Current-induced vortex unbinding in bolometer mixers Type Journal Article
  Year 2005 Publication (up) Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 87 Issue Pages 263506 (1 to 3)  
  Keywords HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile  
  Abstract We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth.  
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  Notes Approved no  
  Call Number Serial 604  
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