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Jiang, L.; Li, J.; Zhang, W.; Yao, Q. J.; Lin, Z. L.; Shi, S. C.; Vachtomin, Y. B.; Antipov, S. V.; Svechnikov, S. I.; Voronov, B. M.; Goltsman, G. N. Characterization of NbN HEB mixers cooled by a close-cycled 4 Kelvin refrigerator 2005 IEEE Trans. Appl. Supercond. details   doi
Jiang, Ling; Miao, Wei; Zhang, Wen; Li, Ning; Lin, Zhen Hui; Yao, Qi Jun; Shi, Sheng-Cai; Svechnikov, S. I.; Vakhtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. Characterization of a quasi-optical NbN superconducting HEB mixer 2006 IEEE Trans. Microwave Theory Techn. details   doi
Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers 2017 IEEE Trans. Terahertz Sci. Technol. details   doi
Nikogosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe 2019 J. Contemp. Phys. details   doi
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer 2003 J. of communications technol. & electronics details   url
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