Akhmadishina, K. F., Bobrinetskiy, I. I., Komarov, I. A., Malovichko, A. M., Nevolin, V. K., Fedorov, G. E., et al. (2015). Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers. Semicond., 49(13), 1749–1753.
Abstract: The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin.
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Gershenzon, E. M., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1990). Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation. Solid State Communications, 76(4), 493–497.
Abstract: The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.
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Gershenzon, E. M., Goltsman, G., Orlova, S., Ptitsina, N., & Gurvich, Y. (1971). Germanium hot-electron narrow-band detector. Sov. Radio Engineering And Electronic Physics, 16(8), 1346.
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Doi, Y., Wang, Z., Ueda, T., Nickels, P., Komiyama, S., Patrashin, M., et al. (2009). CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument. SPICA, (SPICA Workshop 2009).
Abstract: We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.
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Gol'tsman, G. N., Semenov, A. D., Gousev, Y. P., Zorin, M. A., Gogidze, I. G., Gershenzon, E. M., et al. (1991). Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light. Supercond. Sci. Technol., 4(9), 453–456.
Abstract: The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature.
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