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Author Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. url  doi
openurl 
  Title Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range Type Journal Article
  Year 2003 Publication (up) IEEE Microw. Wireless Compon. Lett. Abbreviated Journal IEEE Microw. Wireless Compon. Lett.  
  Volume 13 Issue 11 Pages 493-495  
  Keywords waveguide NbN HEB mixers  
  Abstract We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1531-1309 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1509  
Permanent link to this record
 
 
Author Korneeva, Y.; Florya, I.; Semenov, A.; Korneev, A.; Goltsman, G. doi  openurl
  Title New generation of nanowire NbN superconducting single-photon detector for mid-infrared Type Journal Article
  Year 2011 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 21 Issue 3 Pages 323-326  
  Keywords SSPD  
  Abstract We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 644  
Permanent link to this record
 
 
Author Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. doi  openurl
  Title Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer Type Journal Article
  Year 2015 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 2300304  
  Keywords HEB detector responsivity, HEB model, numerical calculations, numerical model  
  Abstract We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 953  
Permanent link to this record
 
 
Author Korneev, A. A.; Korneeva, Y. P.; Mikhailov, M. Yu.; Pershin, Y. P.; Semenov, A. V.; Vodolazov, D. Yu.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Yu.; Goltsman, G. N. doi  openurl
  Title Characterization of MoSi superconducting single-photon detectors in the magnetic field Type Journal Article
  Year 2015 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 2200504 (1 to 4)  
  Keywords SSPD, SNSPD  
  Abstract We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.  
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  Notes Approved no  
  Call Number RPLAB @ akorneev @ KorneevIEEE2015 Serial 991  
Permanent link to this record
 
 
Author Korneev, A.; Korneeva, Y.; Manova, N.; Larionov, P.; Divochiy, A.; Semenov, A.; Chulkova, G.; Vachtomin, Y.; Smirnov, K.; Goltsman, G. url  doi
openurl 
  Title Recent nanowire superconducting single-photon detector optimization for practical applications Type Journal Article
  Year 2013 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 23 Issue 3 Pages 2201204 (1 to 4)  
  Keywords SSPD, SNSPD  
  Abstract In this paper, we present our approaches to the development of fiber-coupled superconducting single photon detectors with enhanced photon absorption. For such devices we have measured detection efficiency in wavelength range from 500 to 2000 nm. The best fiber coupled devices exhibit detection efficiency of 44.5% at 1310 nm wavelength and 35.5% at 1550 nm at 10 dark counts per second.  
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  Notes Approved no  
  Call Number RPLAB @ akorneev @ KorneevIEEE2013 Serial 996  
Permanent link to this record
 
 
Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. doi  openurl
  Title Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver Type Conference Article
  Year 2017 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue 4 Pages 6  
  Keywords Multi-pixel, HEB, silicon-on-insulator, horn array  
  Abstract We report on the development of a multi-pixel

Hot Electron Bolometer (HEB) receiver fabricated using

silicon membrane technology. The receiver comprises a

2 × 2 array of four HEB mixers, fabricated on a single

chip. The HEB mixer chip is based on a superconducting

NbN thin film deposited on top of the silicon-on-insulator

(SOI) substrate. The thicknesses of the device layer and

handling layer of the SOI substrate are 20 μm and 300 μm

respectively. The thickness of the device layer is chosen

such that it corresponds to a quarter-wave in silicon at

1.35 THz. The HEB mixer is integrated with a bow-tie

antenna structure, in turn designed for coupling to a

circular waveguide,		  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1111  
Permanent link to this record
 
 
Author Titova, N.; Kardakova, A. I.; Tovpeko, N.; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S. R.; Williams, O. A.; Goltsman, G. N.; Klapwijk, T. M. url  doi
openurl 
  Title Slow electron–phonon cooling in superconducting diamond films Type Journal Article
  Year 2017 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue 4 Pages 1-4  
  Keywords superconducting diamond films, electron-phonon cooling  
  Abstract We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers.  
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  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1168  
Permanent link to this record
 
 
Author Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. url  doi
openurl 
  Title Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN Type Journal Article
  Year 2021 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 31 Issue 5 Pages 1-5  
  Keywords NbN SSPD, SNSPD  
  Abstract We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated.  
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  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1222  
Permanent link to this record
 
 
Author Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. url  doi
openurl 
  Title A comparison of VN and NbN thin films towards optimal SNSPD efficiency Type Journal Article
  Year 2021 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 31 Issue 5 Pages 1-4  
  Keywords NbN SSPD, SNSPD, WSi  
  Abstract Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance.  
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  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1223  
Permanent link to this record
 
 
Author Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. url  doi
openurl 
  Title Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films Type Journal Article
  Year 2015 Publication (up) IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 25 Issue 3 Pages 1-4  
  Keywords TiN MKID  
  Abstract We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1296  
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