Capmany, J., Gasulla, I., & Sales, S. (2011). Microwave photonics: Harnessing slow light. Nat. Photon., 5(12), 731–733.
Abstract: Slow-light techniques originally conceived for buffering high-speed digital optical signals now look set to play an important role in providing broadband phase and true time delays for microwave signals.
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Peruzzo, A., Laing, A., Politi, A., Rudolph, T., & O'Brien, J. L. (2011). Multimode quantum interference of photons in multiport integrated devices. Nat. Comm., 2(224), 6.
Abstract: Photonics is a leading approach in realizing future quantum technologies and recently, optical waveguide circuits on silicon chips have demonstrated high levels of miniaturization and performance. Multimode interference (MMI) devices promise a straightforward implementation of compact and robust multiport circuits. Here, we show quantum interference in a 2×2 MMI coupler with visibility of V=95.6+/-0.9%. We further demonstrate the operation of a 4×4 port MMI device with photon pairs, which exhibits complex quantum interference behaviour. We have developed a new technique to fully characterize such multiport devices, which removes the need for phase-sensitive measurements and may find applications for a wide range of photonic devices. Our results show that MMI devices can operate in the quantum regime with high fidelity and promise substantial simplification and concatenation of photonic quantum circuits.
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Ikuta, R., Kusaka, Y., Kitano, suyoshi, Kato, H., Yamamoto, T., Koashi, M., et al. (2011). Wide-band quantum interface for visible-totelecommunication wavelength conversion. Nat. Comm., 2, 5.
Abstract: Although near-infrared photons in telecommunication bands are required for long-distance quantum communication, various quantum information tasks have been performed by using visible photons for the past two decades. Recently, such visible photons from diverse media including atomic quantum memories have also been studied. Optical frequency down-conversion from visible to telecommunication bands while keeping the quantum states is thus required for bridging such wavelength gaps. Here we report demonstration of a quantum interface of frequency down-conversion from visible to telecommunication bands by using a nonlinear crystal, which has a potential to work over wide bandwidths, leading to a high-speed interface of frequency conversion. We achieved the conversion of a picosecond visible photon at 780 nm to a 1,522-nm photon, and observed that the conversion process retained entanglement between the down-converted photon and another photon.
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Crespi, A., Ramponi, R., Osellame, R., Sansoni, L., Bongioanni, I., Sciarrino, F., et al. (2011). Integrated photonic quantum gates for polarization qubits. Nat. Comm., 2(566), 6.
Abstract: The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography.
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Berlín, G., Brassard, G., Bussières, F., Godbout, N., Slater, J. A., & Tittel, W. (2011). Experimental loss-tolerant quantum coin flipping. Nat. Comm., 2(561), 7.
Abstract: Coin flipping is a cryptographic primitive in which two distrustful parties wish to generate a random bit to choose between two alternatives. This task is impossible to realize when it relies solely on the asynchronous exchange of classical bits: one dishonest player has complete control over the final outcome. It is only when coin flipping is supplemented with quantum communication that this problem can be alleviated, although partial bias remains. Unfortunately, practical systems are subject to loss of quantum data, which allows a cheater to force a bias that is complete or arbitrarily close to complete in all previous protocols and implementations. Here we report on the first experimental demonstration of a quantum coin-flipping protocol for which loss cannot be exploited to cheat better. By eliminating the problem of loss, which is unavoidable in any realistic setting, quantum coin flipping takes a significant step towards real-world applications of quantum communication.
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Feresten, N. L., Thornton, J. A., Emmett, J., Lamichhane, P., Epstein, L., Kiesow, A., et al. (Eds.). (2011). Everything: Rocks and Minerals.
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Mitin, V., Antipov, A., Sergeev, A., Vagidov, N., Eason, D., & Strasser, G. (2011). Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers. Nanoscale res lett, 6(1), 6.
Abstract: Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.
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Antipov, A., Bell, M., Yasar, M., Mitin, V., Scharmach, W., Swihart, M., et al. (2011). Luminescence of colloidal CdSe/ZnS nanoparticles: high sensitivity to solvent phase transitions. Nan. Res. Lett., 6, 7.
Abstract: We investigate nanosecond photoluminescence processes in colloidal core/shell CdSe/ZnS nanoparticles dissolved in water and found strong sensitivity of luminescence to the solvent state. Several pronounced changes have been observed in the narrow temperature interval near the water melting point. First of all, the luminescence intensity substantially (approximately 50%) increases near the transition. In a large temperature scale, the energy peak of the photoluminescence decreases with temperature due to temperature dependence of the energy gap. Near the melting point, the peak shows N-type dependence with the maximal changes of approximately 30 meV. The line width increases with temperature and also shows N-type dependence near the melting point. The observed effects are associated with the reconstruction of ligands near the ice/water phase transition.
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Marsili, F., Najafi, F., Dauler, E., Bellei, F., Hu, X., Csete, M., et al. (2011). Single-photon detectors based on ultranarrow superconducting nanowires. Nano Lett., 11(5), 2048–2053.
Abstract: We report efficient single-photon detection (η = 20% at 1550 nm wavelength) with ultranarrow (20 and 30 nm wide) superconducting nanowires, which were shown to be more robust to constrictions and more responsive to 1550 nm wavelength photons than standard superconducting nanowire single-photon detectors, based on 90 nm wide nanowires. We also improved our understanding of the physics of superconducting nanowire avalanche photodetectors, which we used to increase the signal-to-noise ratio of ultranarrow-nanowire detectors by a factor of 4, thus relaxing the requirements on the read-out circuitry and making the devices suitable for a broader range of applications.
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Edlmayr, V., Harzer, T. P., Hoffmann, R., Kiener, D., Scheu, C., & Mitterer, C. (2011). Effects of thermal annealing on the microstructure of sputtered Al2O3 coatings. J. Vac. Sci. Technol. A, 29(4), 8.
Abstract: The morphology and microstructure of Al2O3 thin films deposited by pulsed direct current magnetron sputtering were studied in the as-grown state and after vacuum annealing at 1000 °C for 12 h using transmission electron microscopy. For the coating deposited under low ion bombardment conditions, the film consists of small γ- and/or δ-Al2O3 grains embedded in an amorphous matrix. The grain size at the region close to the interface to the substrate was much larger than that of the remaining layer. Growth of the γ-Al2O3 phase is promoted during annealing but no transformation to α-Al2O3 was detected. For high-energetic growth conditions, clear evidence for γ-Al2O3 formation was found in the upper part of the coating with grain size much larger than for low-energetic growth, but the film was predominately amorphous at the interface region. Annealing resulted in the transformation of γ-Al2O3 to α-Al2O3, while the mainly amorphous part crystallized to γ-Al2O3.
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Lee, B. G., Assefa, S., Green, W. M. J., Min Yang, Schow, C. L., Jahnes, C. V., et al. (2011). Multichannel high-bandwidth coupling of ultradense silicon photonic waveguide array to standard-pitch fiber array. J. Lightwave Technol., 29(4), 475–482.
Abstract: A multichannel tapered coupler interfacing standard 250-μm-pitch low-numerical-aperture (NA) polarization-maintaining fiber arrays with ultradense 20- μm-pitch high-NA silicon waveguides is designed and fabricated. The coupler is based on an array of 12 dual-core glass waveguides on 250-μ m pitch that are tapered to a 20- μm pitch, simultaneously providing both pitch and spot-size conversion. At the wide end, the inner core matches the NA and mode profile of standard single-mode fiber. When drawn and tapered, the inner core “vanishes†and the outer core, surrounded by the clad, matches the NA and mode profile of the on-chip photonic waveguide. Ultradense high-efficiency coupling to an array of Si photonic waveguides is demonstrated using a 12-channel polarization-maintaining-fiber pigtailed tapered coupler. Coupling to Si waveguides is facilitated using SiON spot-size converters integrated into the Si photonic IC to provide 2-3-μm mode field diameters compatible with the tapered coupler. The tapered coupler achieves <; 1 dB coupling losses to photonic waveguides. Furthermore, eight-channel coupling is shown with less than -35 dB crosstalk between channels. Finally, a 640-Gb/s wavelength-division-multiplexing signal is coupled into four waveguides occupying 80 μm of chip edge, providing 160-Gb/s per-channel bandwidths.
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Pentin, I. V., Smirnov, A. V., Ryabchun, S. A., Gol’tsman, G. N., Vaks, V. L., Pripolzin, S. I., et al. (2011). Heterodyne source of THz range based on semiconductor superlattice multiplier. In IRMMW-THz (pp. 1–2).
Abstract: We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state.
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Korneeva, Y., Florya, I., Semenov, A., Korneev, A., & Goltsman, G. (2011). New generation of nanowire NbN superconducting single-photon detector for mid-infrared. IEEE Trans. Appl. Supercond., 21(3), 323–326.
Abstract: We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD.
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Tretyakov, I., Ryabchun, S., Finkel, M., Maslennikov, S., Maslennikova, A., Kaurova, N., et al. (2011). Ultrawide noise bandwidth of NbN hot-electron bolometer mixers with in situ gold contacts. IEEE Trans. Appl. Supercond., 21(3), 620–623.
Abstract: We report a noise bandwidth of 7 GHz in the new generation of NbN hot-electron bolometer (HEB) mixers that are being developed for the space observatory Millimetron. The HEB receiver driven by a 2.5-THz local oscillator offered a noise temperature of 600 K in a 50-MHz final detection bandwidth. As the filter center frequency was swept this value remained nearly constant up to the cutoff frequency of the cryogenic amplifier at 7 GHz. We believe that such a low value of the noise temperature is due to reduced radio frequency (RF) loss at the interface between the superconducting film and the gold contacts. We have also performed gain bandwidth measurements at the superconducting transition on HEB mixers with various lengths and found them to be in excellent agreement with the results of the analytical and numerical models developed for the HEB mixer with both diffusion and phonon cooling of hot electrons.
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Lobanov, Y., Tong, E., Blundell, R., Hedden, A., Voronov, B., & Gol'tsman, G. (2011). Large-signal frequency response of an HEB mixer: from 300 MHz to terahertz. IEEE Trans. Appl. Supercond., 21(3), 628–631.
Abstract: We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment.
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