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Author Zhizhon, Yan; Majedi, Hamed A. openurl 
  Title Optoelectronic mixing in the NbN superconducting nanowire single photon detectors Type Conference Article
  Year 2009 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 3786 Issue Pages 9  
  Keywords Optoelectronic devices, microwave superconductivity, nonlinearity, single photon detector, superconductivity, nanowire, optical mixing, microwave mixers, amplitude modulation, intensity modulation.  
  Abstract In this paper, we present our experimental results on the electrically pumped optoelectronic mixing effect exhibited in a niobium nitride (NbN) superconducting nanowire. The experimental setup in order to test the mixer has been reported in detail. This superconductive nanowire optoelectronic mixer demonstrates photodetection and mixing in an integrated manner. We have explored both effects under a great variety of external conditions, such as temperature and bias current, in order to seek potential ways toward quantum optoelectronic detection and mixing by such nanowire device.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 651  
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Author Goltsman, G. N. url  doi
openurl 
  Title Ultrafast nanowire superconducting single-photon detector with photon number resolving capability Type Conference Article
  Year 2009 Publication (up) Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 7236 Issue Pages 72360D (1 to 11)  
  Keywords PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films  
  Abstract In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Arakawa, Y.; Sasaki, M.; Sotobayashi, H.  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1403  
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Author Hu, Xiaolong; Dauler, Eric A.; Kerman, Andrew J.; Yang, Joel K. W.; White, James E.; Herder, Charles H.; Berggren, Karl K. openurl 
  Title Using surface plasmons to enhance the speed and efficiency of superconducting nanowire single-photon detectors Type Conference Article
  Year 2009 Publication (up) Proceedings of the Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference Abbreviated Journal Proc of Conf. on Lasers and El.-Opt.  
  Volume Issue Pages 1-2  
  Keywords optical antennas  
  Abstract We report our design and fabrication of superconducting nanowire single-photon detectors integrated with gold plasmonic nanostructures, which can enhance the absorption of TM-polarized light, and can enlarge the effective area without sacrificing detector speed.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 744  
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Author Ryabchun, S. A.; Tretyakov, I. V.; Pentin, I. V.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N. doi  openurl
  Title Low-noise wide-band hot-electron bolometer mixer based on an NbN film Type Journal Article
  Year 2009 Publication (up) Radiophys. Quant. Electron. Abbreviated Journal  
  Volume 52 Issue 8 Pages 576-582  
  Keywords HEB mixer, in-situ contacts, noise temperature, conversion gain bandwidth, diffusion cooling channel  
  Abstract We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.  
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  Notes Approved no  
  Call Number Serial 599  
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Author Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M. openurl 
  Title CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument Type Journal Article
  Year 2009 Publication (up) SPICA Abbreviated Journal SPICA  
  Volume Issue SPICA Workshop 2009 Pages  
  Keywords detectors; Infrared  
  Abstract We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 672  
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