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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Schubert, J.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E.
Title NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz Type Conference Article
Year 1999 Publication (up) Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 238-246
Keywords NbN HEB mixers
Abstract The performance of NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1- 0.2 gm, the width is 1-2 gm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power required is less than 500 nW at the receiver input. First results on the spiral antenna polarization measurements are reported.
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Call Number Serial 1575
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Author Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman
Title Characterization of the electron energy relaxation process in NbN hot-electron devices Type Conference Article
Year 1999 Publication (up) Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 390-397
Keywords HEB mixers, SSPD, SNSPD, NbN films, Nb films
Abstract We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
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Publisher Place of Publication Editor
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Notes Approved no
Call Number Serial 1576
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Author Tong, C.-Y. Edward; Kawamura, Jonathan; Todd, R. Hunter; Papa, D. Cosmo; Blundell, Raymond.; Smith, Michael; Patt, Ferdinand; Gol'tsman, Gregory; Gershenzon, Eugene
Title Successful operation of a 1 THz NbN hot-electron bolometer receiver Type Conference Article
Year 2000 Publication (up) Proc. 11th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 11th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 49-59
Keywords NbN HEB mixers, applications
Abstract A phonon-cooled NbN superconductive hot-electron bolometer receiver covering the frequency range 0.8-1.04 THz has successfully been used for astronomical observation at the Sub-Millimeter Telescope Observatory on Mount Graham, Arizona. This waveguide heterodyne receiver is a modified version of our fixed-tuned 800 GHz HEB receiver to allow for operation beyond 1 THz. The measured noise temperature of this receiver is about 1250 K at 0.81 THz, 560 K at 0.84 THz, and 1600 K at 1.035 THz. It has a 1 GHz wide IF bandwidth, centered at 1.8 GHz. This receiver has recently been used to detect the CO (9-8) molecular line emission at 1.037 THz in the Orion nebula. This is the first time a ground-based heterodyne receiver has been used to detect a celestial source above 1 THz.
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Notes Approved no
Call Number Serial 303
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Author Semenov, A. D.; Hübers, H.–W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M.
Title Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer Type Conference Article
Year 2000 Publication (up) Proc. 11th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 11th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 39-48
Keywords NbN HEB mixers
Abstract We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
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Notes Approved no
Call Number Serial 305
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Author Cherednichenko, S.; Rönnung, F.; Gol’tsman, G.; Kollberg, E.; Winkler, D.
Title YBa2Cu3O7-δ hot-electron bolometer mixer at 0.6 THz Type Conference Article
Year 2000 Publication (up) Proc. 11th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 11th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 517-522
Keywords YBCO HTS HEB mixers
Abstract We present an investigation of hot-electron bolometric mixer based on a YBa 2 Cu 3 O 7-δ (YBCO) superconducting thin film. Mixer conversion loss of –46 dB, absorbed local oscillator power and intermediate frequency bandwidth were measured at the local oscillator frequency 0.6 THz. The fabrication technique for nanoscale YBCO hot-electron bolometer (HEB) mixer integrated with a planar antenna structure is described.
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Notes Approved no
Call Number Serial 1556
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Author Cherednichenko, S.; Kroug, M.; Yagoubov, P.; Merkel, H.; Kollberg, E.; Yngvesson, K. S.; Voronov, B.; Gol’tsman, G.
Title IF bandwidth of phonon cooled HEB mixers made from NbN films on MgO substrates Type Conference Article
Year 2000 Publication (up) Proc. 11th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 11th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 219-227
Keywords NbN HEB mixers, cinversion gain bandwidth, IF bandwidth
Abstract An investigation of gain and noise bandwidth of phonon-cooled hot-electron bolometric (HEB) mixers is presented. The radiation coupling to the mixers is quasioptical through either a spiral or twin-slot antenna. A maximum gain bandwidth of 4.8 GHz is obtained for mixers based on a 3.5 nm thin NbN film with Tc= 10 K. The noise bandwidth is 5.6 GHz, at the moment limited by parasitic elements in the, device mount fixture. At 0.65 THz the DSB receiver noise temperature is 700-800 К in the IF band 1-2 GHz, and 1150-2700 К in the band 3.5-7 GHz.
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Publisher Place of Publication Editor
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Area Expedition Conference
Notes Approved no
Call Number Serial 1557
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Author Cherednichenko, S.; Kroug, M.; Merkel, H.; Kollberg, E.; Loudkov, D.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Gershenzon, E.
Title Local oscillator power requirement and saturation effects in NbN HEB mixers Type Conference Article
Year 2001 Publication (up) Proc. 12th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 12th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 273-285
Keywords NbN HEB mixers, LO power, local oscillator power, saturation effect, dynamic range
Abstract The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics.
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Corporate Author Thesis
Publisher Place of Publication San Diego, CA, USA Editor Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 318
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Author Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M.
Title Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies Type Conference Article
Year 2001 Publication (up) Proc. 12th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 12th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 286-296
Keywords NbN HEB mixers
Abstract
Address
Corporate Author Thesis
Publisher Place of Publication San Diego, CA, USA Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 323
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Author Vahtomin, Yuriy B.; Finkel, Matvey I.; Antipov, Sergey V.; Voronov, Boris M.; Smirnov, Konstantin V.; Kaurova, Natalia S.; Drakinski, Vladimir N.; Gol'tsman, Gregogy N.
Title Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si Type Conference Article
Year 2002 Publication (up) Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 13th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 259-270
Keywords NbN HEB mixers, conversion gain bandwidth
Abstract We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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Corporate Author Thesis
Publisher Place of Publication Cambridge, MA, USA Editor Harvard university
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number Serial 325
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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
Title The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz Type Conference Article
Year 2002 Publication (up) Proc. 13th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 13th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 65-72
Keywords waveguide NbN HEB mixers
Abstract We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation.
Address
Corporate Author Thesis
Publisher Place of Publication Cambridge, MA, USA Editor Harvard university
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 326
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