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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
Year 1971 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 5 Pages 185-186
Keywords Ge, Si, neutral impurity atom, binding energy
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Notes Approved no
Call Number Serial 1739
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Transitions of electrons between excited states of donors in germanium Type Journal Article
Year 1971 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 2 Pages 63-65
Keywords Ge, donors, excited states
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Area Expedition Conference
Notes Approved no
Call Number Serial 1740
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
Year 1971 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 6 Pages 241
Keywords Ge, gamma irradiation, defects, impurities
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Notes Approved no
Call Number Serial 1742
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M.
Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
Year 2001 Publication (up) Jetp Lett. Abbreviated Journal Jetp Lett.
Volume 73 Issue 1 Pages 44-47
Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field
Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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Series Volume Series Issue Edition
ISSN 0021-3640 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1752
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Author Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G.
Title Absorption spectra in electron transitions between excited states of impurities in germanium Type Journal Article
Year 1975 Publication (up) JETP Lett. Abbreviated Journal JETP Lett.
Volume 22 Issue 4 Pages 95-97
Keywords Ge, impurities, excited states, absorption spectra
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Notes Approved no
Call Number Serial 1773
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Author Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R.
Title Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions Type Conference Article
Year 2002 Publication (up) Mater. Sci. Forum Abbreviated Journal Mater. Sci. Forum
Volume 384-3 Issue Pages 107-116
Keywords 2DEG, AlGaAs/GaAs
Abstract A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.
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Area Expedition Conference Materials Science Forum
Notes Approved no
Call Number Serial 1536
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Author Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I.
Title Electron-phonon scattering rate in impure NbC films Type Abstract
Year 1998 Publication (up) NASA/ADS Abbreviated Journal NASA/ADS
Volume Issue Pages Y35.08
Keywords NbC films
Abstract The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Area Expedition Conference American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA
Notes Approved no
Call Number Serial 1591
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Author Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.
Title Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses Type Journal Article
Year 1993 Publication (up) Opt. Lett. Abbreviated Journal Opt. Lett.
Volume 18 Issue 2 Pages 96-97
Keywords YBCO HTS detectors
Abstract We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment.
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Language English Summary Language Original Title
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Series Volume Series Issue Edition
ISSN 0146-9592 ISBN Medium
Area Expedition Conference
Notes PMID:19802049 Approved no
Call Number Serial 1660
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
Year 1982 Publication (up) Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy
Volume 52 Issue 4 Pages 454-455
Keywords Ge, exciton photoconduction
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Notes Approved no
Call Number Serial 1715
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Author Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M.
Title Electron-phonon interaction in thin YBaCuO films and fast detectors Type Conference Article
Year 1993 Publication (up) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
Volume 112 Issue Pages 184-185
Keywords YBCO HTS detectors
Abstract The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
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Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.
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Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
Notes Approved no
Call Number Serial 1662
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Author Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
Title Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film Type Conference Article
Year 1993 Publication (up) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
Volume 112 Issue Pages 193-195
Keywords YBCO HTS detectors
Abstract We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.
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Corporate Author Thesis
Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.
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Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
Notes Approved no
Call Number Serial 1663
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Author Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.
Title Thermal boundary resistance at YBaCuO film-substrate interface Type Conference Article
Year 1993 Publication (up) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
Volume 112 Issue Pages 405-406
Keywords YBCO films
Abstract The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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Corporate Author Thesis
Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.
Language Summary Language Original Title
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Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
Notes Approved no
Call Number Serial 1665
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Author Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
Title Electron-phonon interaction in disordered NbN films Type Journal Article
Year 1994 Publication (up) Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 194-196 Issue Pages 1355-1356
Keywords NbN films
Abstract Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1649
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V.
Title Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction Type Journal Article
Year 1991 Publication (up) Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 169 Issue 1-4 Pages 629-630
Keywords impure superconductors
Abstract Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals.
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ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1682
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Author Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M.
Title AC losses and submillimeter absorption in single crystals La2CuO4 Type Journal Article
Year 1990 Publication (up) Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 165-166 Issue Pages 1269-1270
Keywords metal-dielectric-La2Cu04
Abstract The La2CuO4 single crystals were used to carry out the measurements of transmission spectra within the submillimeter range of wavelengths, as well as the capacitance C and conductivity G in the region of acoustic frequencies of the metal-dielectric-La2Cu04 system at low temperatures. The optical spectra display a threshold character. There takes place a sharp decreasing of transmission signal in the energy range of hυ>1.5meV. The C(ω,T) and G(ω,T) dependences have a universal form characteristic of relaxation processes of the Debye type. The relaxation time dependence displays a thermoactivation character τ(T)-exp(ξ/T) with a gap value of ξ≃2meV,coinciding with the optical one. It is assumed that there exist excitations with a characteristic energy ~ 2meV in La2Cu04.A possible nature of the revealed low-energy excitations is discussed.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1686
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