Reiger, E., Pan, D., Slysz, W., Jukna, A., Sobolewski, R., Dorenbos, S., et al. (2007). Spectroscopy with nanostructured superconducting single photon detectors. IEEE J. Select. Topics Quantum Electron., 13(4), 934–943.
Abstract: Superconducting single-photon detectors (SSPDs) are nanostructured devices made from ultrathin superconducting films. They are typically operated at liquid helium temperature and exhibit high detection efficiency, in combination with very low dark counts, fast response time, and extremely low timing jitter, within a broad wavelength range from ultraviolet to mid-infrared (up to 6 mu m). SSPDs are very attractive for applications such as fiber-based telecommunication, where single-photon sensitivity and high photon-counting rates are required. We review the current state-of-the-art in the SSPD research and development, and compare the SSPD performance to the best semiconducting avalanche photodiodes and other superconducting photon detectors. Furthermore, we demonstrate that SSPDs can also be successfully implemented in photon-energy-resolving experiments. Our approach is based on the fact that the size of the hotspot, a nonsuperconducting region generated upon photon absorption, is linearly dependent on the photon energy. We introduce a statistical method, where, by measuring the SSPD system detection efficiency at different bias currents, we are able to resolve the wavelength of the incident photons with a resolution of 50 nm.
|
Sobolewski, R., Verevkin, A., Gol'tsman, G. N., Lipatov, A., & Wilsher, K. (2003). Ultrafast superconducting single-photon optical detectors and their applications. IEEE Trans. Appl. Supercond., 13(2), 1151–1157.
Abstract: We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
|
Gol'tsman, G., Minaeva, O., Korneev, A., Tarkhov, M., Rubtsova, I., Divochiy, A., et al. (2007). Middle-infrared to visible-light ultrafast superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 17(2), 246–251.
Abstract: We present an overview of the state-of-the-art of NbN superconducting single-photon detectors (SSPDs). Our devices exhibit quantum efficiency (QE) of up to 30% in near-infrared wavelength and 0.4% at 5 mum, with a dark-count rate that can be as low as 10 -4 s -1 . The SSPD structures integrated with lambda/4 microcavities achieve a QE of 60% at telecommunication, 1550-nm wavelength. We have also developed a new generation of SSPDs that possess the QE of large-active-area devices, but, simultaneously, are characterized by low kinetic inductance that allows achieving short response times and the GHz-counting rate with picosecond timing jitter. The improvements presented in the SSPD development, such as fiber-coupled SSPDs, make our detectors most attractive for high-speed quantum communications and quantum computing.
|
Yang, J. K. W., Kerman, A. J., Dauler, E. A., Anant, V., Rosfjord, K. M., & Berggren, K. K. (2007). Modeling the electrical and thermal response of superconducting nanowire single-photon detectors. IEEE Trans. Appl. Supercond., 17(2), 581–585.
Abstract: We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model.
|
Korneeva, Y., Florya, I., Semenov, A., Korneev, A., & Goltsman, G. (2011). New generation of nanowire NbN superconducting single-photon detector for mid-infrared. IEEE Trans. Appl. Supercond., 21(3), 323–326.
Abstract: We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD.
|
Schuck, C., Pernice, W. H. P., Minaeva, O., Li, M., Gol'tsman, G., Sergienko, A. V., et al. (2013). Matrix of integrated superconducting single-photon detectors with high timing resolution. IEEE Trans. Appl. Supercond., 23(3), 2201007.
Abstract: We demonstrate a large grid of individually addressable superconducting single photon detectors on a single chip. Each detector element is fully integrated into an independent waveguide circuit with custom functionality at telecom wavelengths. High device density is achieved by fabricating the nanowire detectors in traveling wave geometry directly on top of silicon-on-insulator waveguides. Our superconducting single photon detector matrix includes detector designs optimized for high detection efficiency, low dark count rate, and high timing accuracy. As an example, we exploit the high timing resolution of a particularly short nanowire design to resolve individual photon round-trips in a cavity ring-down measurement of a silicon ring resonator.
|
Gol’tsman, G., Okunev, O., Chulkova, G., Lipatov, A., Dzardanov, A., Smirnov, K., et al. (2001). Fabrication and properties of an ultrafast NbN hot-electron single-photon detector. IEEE Trans. Appl. Supercond., 11(1), 574–577.
Abstract: A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
|
Korneev, A. A., Korneeva, Y. P., Mikhailov, M. Y., Pershin, Y. P., Semenov, A. V., Vodolazov, D. Y., et al. (2015). Characterization of MoSi superconducting single-photon detectors in the magnetic field. IEEE Trans. Appl. Supercond., 25(3), 2200504 (1 to 4).
Abstract: We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges.
|
Korneev, A., Korneeva, Y., Manova, N., Larionov, P., Divochiy, A., Semenov, A., et al. (2013). Recent nanowire superconducting single-photon detector optimization for practical applications. IEEE Trans. Appl. Supercond., 23(3), 2201204 (1 to 4).
Abstract: In this paper, we present our approaches to the development of fiber-coupled superconducting single photon detectors with enhanced photon absorption. For such devices we have measured detection efficiency in wavelength range from 500 to 2000 nm. The best fiber coupled devices exhibit detection efficiency of 44.5% at 1310 nm wavelength and 35.5% at 1550 nm at 10 dark counts per second.
|
Bell, M., Kaurova, N., Divochiy, A., Gol'tsman, G., Bird, J., Sergeev, A., et al. (2007). On the nature of resistive transition in disordered superconducting nanowires. IEEE Trans. Appl. Supercond., 17(2), 267–270.
Abstract: Hot-electron single-photon counters based on long superconducting nanowires are starting to become popular in optical and infrared technologies due to their ultimately high sensitivity and very high response speed. We investigate intrinsic fluctuations in long NbN nanowires in the temperature range of 4.2 K-20 K, i.e. above and below the superconducting transition. These fluctuations are responsible for fluctuation resistivity and also determine the noise in practical devices. Measurements of the fluctuation resistivity were performed at low current densities and also in external magnetic fields up to 5 T. Above the BCS critical temperature T co the resistivity is well described by the Aslamazov-Larkin (AL) theory for two-dimensional samples. Below T co the measured resistivity is in excellent agreement with the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory developed for one-dimensional superconductors. Despite that our nanowires of 100 nm width are two-dimensional with respect to the coherence length, our analysis shows that at relatively low current densities the one-dimensional LAMH mechanism based on thermally induced phase slip centers dominates over the two-dimensional mechanism related to unbinding of vortex-antivortex pairs below the Berezinskii-Kosterlitz-Thouless transition.
|
Kitaygorsky, J., Komissarov, I., Jukna, A., Pan, D., Minaeva, O., Kaurova, N., et al. (2007). Dark counts in nanostructured nbn superconducting single-photon detectors and bridges. IEEE Trans. Appl. Supercond., 17(2), 275–278.
Abstract: We present our studies on dark counts, observed as transient voltage pulses, in current-biased NbN superconducting single-photon detectors (SSPDs), as well as in ultrathin (~4 nm), submicrometer-width (100 to 500 nm) NbN nanobridges. The duration of these spontaneous voltage pulses varied from 250 ps to 5 ns, depending on the device geometry, with the longest pulses observed in the large kinetic-inductance SSPD structures. Dark counts were measured while the devices were completely isolated (shielded by a metallic enclosure) from the outside world, in a temperature range between 1.5 and 6 K. Evidence shows that in our two-dimensional structures the dark counts are due to the depairing of vortex-antivortex pairs caused by the applied bias current. Our results shed some light on the vortex dynamics in 2D superconductors and, from the applied point of view, on intrinsic performance of nanostructured SSPDs.
|
Kitaygorsky, J., Zhang, J., Verevkin, A., Sergeev, A., Korneev, A., Matvienko, V., et al. (2005). Origin of dark counts in nanostructured NbN single-photon detectors. IEEE Trans. Appl. Supercond., 15(2), 545–548.
Abstract: We present our study of dark counts in ultrathin (3.5 to 10 nm thick), narrow (120 to 170 nm wide) NbN superconducting stripes of different lengths. In experiments, where the stripe was completely isolated from the outside world and kept at temperature below the critical temperature Tc, we detected subnanosecond electrical pulses associated with the spontaneous appearance of the temporal resistive state. The resistive state manifested itself as generation of phase-slip centers (PSCs) in our two-dimensional superconducting stripes. Our analysis shows that not far from Tc, PSCs have a thermally activated nature. At lowest temperatures, far below Tc, they are created by quantum fluctuations.
|
Zhang, J., Slysz, W., Verevkin, A., Okunev, O., Chulkova, G., Korneev, A., et al. (2003). Response time characterization of NbN superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 13(2), 180–183.
Abstract: We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps.
|
Gupta, D., & Kadin, A. M. (1999). Single-photon-counting hotspot detector with integrated RSFQ readout electronics. IEEE Trans. Appl. Supercond., 9(2), 4487–4490.
Abstract: Absorption of an infrared photon in an ultrathin film (such as 10-nm NbN) creates a localized nonequilibrium hotspot on the submicron length scale and sub-ns time scale. If a strip /spl sim/1 /spl mu/m wide is biased in the middle of the superconducting transition, this hotspot will lead to a resistance pulse with amplitude proportional to the energy of the incident photon. This resistance pulse, in turn, can be converted to a current pulse and inductively coupled to a SQUID amplifier with a digitized output, operating at 4 K or above. A preliminary design analysis indicates that this data can be processed on-chip, using ultrafast RSFQ digital circuits, to obtain a sensitive infrared detector for wavelengths up to 10 /spl mu/m and beyond, with bandwidth of 1 GHz, that counts individual photons and measures their energy with 25 meV resolution. This proposed device combines the speed of a hot-electron bolometer with the single-photon-counting ability of a transition-edge microcalorimeter, to obtain an infrared detector with sensitivity, speed, and spectral selectivity that are unmatched by any alternative technology.
|
Lobanov, Y., Shcherbatenko, M., Semenov, A., Kovalyuk, V., Kahl, O., Ferrari, S., et al. (2017). Superconducting nanowire single photon detector for coherent detection of weak signals. IEEE Trans. Appl. Supercond., 27(4), 1–5.
Abstract: Traditional photon detectors are operated in the direct detection mode, counting incident photons with a known quantum efficiency. Here, we have investigated a superconducting nanowire single photon detector (SNSPD) operated as a photon counting mixer at telecommunication wavelength around 1.5 μm. This regime of operation combines excellent sensitivity of a photon counting detector with excellent spectral resolution given by the heterodyne technique. Advantageously, we have found that low local oscillator (LO) power of the order of hundreds of femtowatts to a few picowatts is sufficient for clear observation of the incident test signal with the sensitivity approaching the quantum limit. With further optimization, the required LO power could be significantly reduced, which is promising for many practical applications, such as the development of receiver matrices or recording ultralow signals at a level of less-than-one-photon per second. In addition to a traditional NbN-based SNSPD operated with normal incidence coupling, we also use detectors with a travelling wave geometry, where a NbN nanowire is placed on the top of a Si 3 N 4 nanophotonic waveguide. This approach is fully scalable and a large number of devices could be integrated on a single chip.
|
