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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
Year 1976 Publication (down) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 43 Issue 1 Pages 116-122
Keywords Ge, free excitons
Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
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Notes Approved no
Call Number Serial 1731
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
Title Submillimeter spectroscopy of semiconductors Type Journal Article
Year 1973 Publication (down) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 37 Issue 2 Pages 299-304
Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
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Call Number Serial 1735
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
Year 1975 Publication (down) Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 40 Issue 2 Pages 311-315
Keywords Ge, cyclotron resonance
Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
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Notes Approved no
Call Number Serial 1768
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Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.
Title Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure Type Journal Article
Year 1989 Publication (down) Sov. Phys. and Technics of Semiconductors Abbreviated Journal Sov. Phys. and Technics of Semiconductors
Volume 23 Issue 8 Pages 843-846
Keywords Ge, crystallography
Abstract Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
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Notes Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge Approved no
Call Number Serial 1692
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V.
Title Heating of electrons in superconductor in the resistive state due to electromagnetic radiation Type Journal Article
Year 1984 Publication (down) Solid State Communications Abbreviated Journal Solid State Communications
Volume 50 Issue 3 Pages 207-212
Keywords Nb HEB
Abstract The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
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ISSN 0038-1098 ISBN Medium
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Notes Approved no
Call Number Serial 1709
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