Sobolewski, R., Verevkin, A., Gol'tsman, G. N., Lipatov, A., & Wilsher, K. (2003). Ultrafast superconducting single-photon optical detectors and their applications. IEEE Trans. Appl. Supercond., 13(2), 1151–1157.
Abstract: We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications.
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Gol'tsman, G., Minaeva, O., Korneev, A., Tarkhov, M., Rubtsova, I., Divochiy, A., et al. (2007). Middle-infrared to visible-light ultrafast superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 17(2), 246–251.
Abstract: We present an overview of the state-of-the-art of NbN superconducting single-photon detectors (SSPDs). Our devices exhibit quantum efficiency (QE) of up to 30% in near-infrared wavelength and 0.4% at 5 mum, with a dark-count rate that can be as low as 10 -4 s -1 . The SSPD structures integrated with lambda/4 microcavities achieve a QE of 60% at telecommunication, 1550-nm wavelength. We have also developed a new generation of SSPDs that possess the QE of large-active-area devices, but, simultaneously, are characterized by low kinetic inductance that allows achieving short response times and the GHz-counting rate with picosecond timing jitter. The improvements presented in the SSPD development, such as fiber-coupled SSPDs, make our detectors most attractive for high-speed quantum communications and quantum computing.
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Yang, J. K. W., Kerman, A. J., Dauler, E. A., Anant, V., Rosfjord, K. M., & Berggren, K. K. (2007). Modeling the electrical and thermal response of superconducting nanowire single-photon detectors. IEEE Trans. Appl. Supercond., 17(2), 581–585.
Abstract: We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model.
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Korneeva, Y., Florya, I., Semenov, A., Korneev, A., & Goltsman, G. (2011). New generation of nanowire NbN superconducting single-photon detector for mid-infrared. IEEE Trans. Appl. Supercond., 21(3), 323–326.
Abstract: We present a break-through approach to mid-infrared single-photon detection based on nanowire NbN superconducting single-photon detectors (SSPD). Although SSPD became a mature technology for telecom wavelengths (1.3-1.55 μm) its further expansion to mid-infrared wavelength was hampered by low sensitivity above 2 μm. We managed to overcome this limit by reducing the nanowire width to 50 nm, while retaining high superconducting properties and connecting the wires in parallel to produce a voltage response of sufficient magnitude. The new device exhibits 10 times better quantum efficiency at 3.5 μm wavelength than the “standard” SSPD.
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Xiaolong Hu, Holzwarth, C. W., Masciarelli, D., Dauler, E. A., & Berggren, K. K. (2009). Efficiently coupling light to superconducting nanowire single-photon detectors. IEEE Trans. Appl. Supercond., 19(3), 336–340.
Abstract: We designed superconducting nanowire single-photon detectors (SNSPDs) integrated with silver optical antennae for free-space coupling and a dielectric waveguide for fiber coupling. According to our finite-element simulation, (1) for the free-space coupling, the absorptance of the NbN nanowire for TM-polarized photons at the wavelength of 1550 nm can be as high as 96% by adding silver optical antennae; (2) for the fiber coupling, the absorptance of the NbN nanowire for TE-like-polarized photons can reach 76% including coupling efficiency at the wavelength of 1550 nm by adding a silicon nitride waveguide and an inverse-taper coupler.
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