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Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. |
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Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method |
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2016 |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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30-32 |
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NbN HEB, GaN buffer layer |
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In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. |
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1202 |
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Shcherbatenko, M.; Lobanov, Y.; Kovalyuk, V.; Korneev, A.; Gol'tsman, G. N. |
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Title |
Photon counting detector as a mixer with picowatt local oscillator power requirement |
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Conference Article |
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2016 |
Publication |
Proc. 27th Int. Symp. Space Terahertz Technol. |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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110 |
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SSPD mixer, SNSPD |
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At the current stage of the heterodyne receiver technology, great attention is paid to the development of detector arrays and matrices comprising many detectors on a single wafer. However, any traditional THz detector (such as SIS, HEB, or Schottky diode) requires quite a noticeable amount of Local Oscillator (LO) power which scales with the matrix size, and the total amount of the LO power needed is much greater than that available from compact and handy solid state sources. Substantial reduction of the LO power requirement may be obtained with a photon-counting detector used as a mixer. This approach, mentioned earlier in [1,2] provides a number of advantages. Thus, sensitivity of such a detector would be at the quantum limit (because of the photon-counting nature of the detector) and just a few LO photons for the mixing would be required leading to a possible breakthrough in the matrix receiver development. In addition, the receiver could be easily tuned from the heterodyne to the direct detection mode without any loss in its sensitivity with the latter limited only by the quantum efficiency of the detector used. We demonstrate such a technique with the use of the Superconducting Nanowire Single Photon Detector(SNSPD)[3] irradiated by both 1.5 μm LO with a tiny amount of power (from a few picowatts down to femtowatts) facing the detector, and the test signal with a power significantly less than that of the LO. The SNSPD was operated in the current mode and the bias current was slightly below its critical value. Irradiating the detector with either the LO or the signal source produced voltage pulses which are statistically evenly distributed and could be easily counted by a lab counter or oscilloscope. Irradiating the detector by the both lasers simultaneously produced pulses at the frequency f m which is the exact difference between the frequencies at which the two lasers operate. f m could be deduced form either counts statistics integrated over a sufficient time interval or with the help of an RF spectrum analyzer. In addition to the chip SNSPD with normal incidence coupling, we use the detectors with a travelling wave geometry design [4]. In this case a niobium nitride nanowire is placed on the top of a nanophotonic waveguide, thus increasing the efficient interaction length. Integrated device scheme allows us to measure the optical losses with high accuracy. Our approach is fully scalable and, along with a large number of devices integrated on a single chip can be adapted to the mid and far IR ranges. This work was supported in part by the Ministry of Education and Science of the Russian Federation, contract no. 14.B25.31.0007 and by RFBR grant # 16-32-00465. 1. Leaf A. Jiang and Jane X. Luu, ―Heterodyne detection with a weak local oscillator, Applied Optics Vol. 47, Issue 10, pp. 1486-1503 (2008) 2. Matsuo H. ―Requirements on Photon Counting Detectors for Terahertz Interferometry J Low Temp Phys (2012) 167:840–845 3. A. Semenov, G. Gol'tsman, A. Korneev, “Quantum detection by current carrying superconducting film”, Physica C, 352, pp. 349-356 (2001) 4. O. Kahl, S. Ferrari, V. Kovalyuk, G. N. Goltsman, A. Korneev, and W. H. P. Pernice, ―Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths., Sci. Rep., vol. 5, p. 10941, (2015). |
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Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
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Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
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1997 |
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Proc. 27th Eur. Microwave Conf. |
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2 |
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972-977 |
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HEB mixer, fabrication process |
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The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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Jerusalem, Israel |
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IEEE |
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27th Eur. Microwave Conf. |
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1075 |
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Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G. N. |
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NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling |
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Conference Article |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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Proc. 20th ISSTT |
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151-154 |
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HEB, mixer, bandwidth, noise temperatue, in-situ contacts, in situ contacts |
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Charlottesville, USA |
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590 |
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Lobanov, Y.; Tong, C.; Blundell, R.; Gol'tsman, G. |
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A study of direct detection effect on the linearity of hot electron bolometer mixers |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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Proc. 20th ISSTT |
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282-287 |
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HEB mixer, direct detection effect |
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We have performed a study of how direct detection affects the linearity and hence the calibration of an HEB mixer. Two types of waveguide HEB devices have been used: a 0.8 THz HEB mixer and a 1.0 THz HEB mixer which is ~5 times smaller than the former. Two independent experimental approaches were used. In the ΔG/G method, the conversion gain of the HEB mixer is first measured as a function of the bias current for a number of bias voltages. At each bias setting, we carefully measure the change in the operating current when the input loads are switched. From the measured data, we can derive the expected difference in gain between the hot and cold loads. In the second method (injection method [1]), the linearity of the HEB mixer is independently measured by injecting a modulated signal for different input load temperatures. The results of both approaches confirm that there is gain compression in the operation of HEB mixers. Based on the results of our measurements, we discuss the impact of direct detection effects on the operation of HEB mixers. |
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RPLAB @ gujma @ |
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724 |
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Semenov, A. D.; Sergeev, A. V.; Kouminov, P.; Goghidze, I. G.; Heusinger, M. A.; Nebosis, R. S.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
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Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements |
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1993 |
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Proc. 1st European Conf. on Appl. Supercond. |
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Proc. 1st European Conf. on Appl. Supercond. |
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2 |
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1443-1446 |
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YBCO HTS detectors |
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Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory. |
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Freyhardt, H. C. |
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1st European conference on applied superconductivity |
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1661 |
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Smirnov, A. V.; Larionov, P. A.; Finkel, M. I.; Maslennikov, S. N.; Voronov, B. M.; Gol'tsman, G. N. |
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NbZr films for THz phonon-cooled HEB mixers |
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2008 |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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Proc. 19th Int. Symp. Space Terahertz Technol. |
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44-47 |
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HEB, NbZr, material search |
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Groningen, Netherlands |
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577 |
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Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. |
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Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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177-179 |
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directly coupled NbN HEB mixers |
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We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz. |
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Paris, France |
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Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
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Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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81 |
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NbN HEB mixers |
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We present a detailed experimental study of the direct detection effect in a small volume (0.15pm x lpm) NbN hot electron bolometer mixer. It is a quasioptical mixer with a twin slot antenna designed for 700 GHz and the measurement was done at a LO frequency of 670 GHz. The direct detection effect is characterized by a change in the mixer bias current when switching broadband radiation from a 300 K hot load to a 77 K cold load in a standard Y factor measurement. The result is, depending on the receiver under study, an increase or decrease in the receiver noise temperature. We find that the small signal noise temperature, which is the noise temperature that would be observed without the presence of the direct detection effect, and thus the one that is relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 K and 77 K calibration loads. Thus, in our case the direct detection effect reduces the mixer sensitivity. These results are in good agreement with previous measurement at THz frequencies [1]. Other experiments report an increase in mixer sensitivity [2]. To analyze this discrepancy we have designed a separate set of experiments to find out the physical origin of the direct detection effect. Possible candidates are the bias current dependence of the mixer gain and the bias current dependence of the IF match. We measured directly the change in mixer IF match and receiver gain due to the direct detection effect. From these measurements we conclude that the direct detection effect is caused by a combination of bias current reduction when switching form the 77 K to the 300 K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. We also find that an increase in receiver sensitivity due to the direct detection effect is only possible if the noise temperature change due to the direct detection is dominated by the mixer-amplifier IF match. [1] J.J.A. Baselmans, A. Baryshev, S.F. Reker, M. Hajenius, J.R. Gao, T.M. Klapwijk, Yu.Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman., Appl. Phys. Lett. 86, 163503 (2005). [2] S. Svechnokov, A. Verevkin, B. Voronov, E. Menschikov. E. Gershenzon, G. Gol'tsman, 9th Int. Symp. On Space THz. Techn., 45, (1999). |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
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Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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187-189 |
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NbN HEB mixers |
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We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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