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Dryazgov, M.; Semenov, A.; Manova, N.; Korneeva, Y.; Korneev, A. |
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Title |
Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width |
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Conference Article |
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Year |
2020 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1695 |
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012195 (1 to 4) |
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Keywords |
SSPD modelling, SNSPD |
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Abstract |
The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips. |
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1742-6588 |
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1785 |
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Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A. |
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Title |
Developing of NbN films for superconducting microstrip single-photon detector |
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Conference Article |
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Year |
2020 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1695 |
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012116 (1 to 5) |
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NbN SSPD, SNSPD, NbN films |
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We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20. |
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1742-6588 |
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1786 |
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Polyakova, M. I.; Korneev, A. A.; Semenov, A. V. |
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Title |
Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films |
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Conference Article |
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2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1695 |
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012146 (1 to 3) |
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NbN SSPD, SNSPD, MoSi |
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In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width. |
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1787 |
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Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. |
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Title |
Ultrafast superconducting single-photon detector |
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Journal Article |
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2009 |
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J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
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56 |
Issue |
15 |
Pages |
1670-1680 |
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Keywords |
SSPD, SNSPD |
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The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented. |
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0950-0340 |
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RPLAB @ akorneev @ |
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607 |
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Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. |
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Title |
Superconducting parallel nanowire detector with photon number resolving functionality |
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Journal Article |
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2009 |
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J. Modern Opt. |
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J. Modern Opt. |
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56 |
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2-3 |
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334-344 |
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Keywords |
PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN |
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We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
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0950-0340 |
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RPLAB @ gujma @ |
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701 |
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