Records |
Author |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
Title |
Graphene-based lateral Schottky diodes for detecting terahertz radiation |
Type |
Conference Article |
Year |
2018 |
Publication |
Proc. Optical Sensing and Detection V |
Abbreviated Journal |
Proc. Optical Sensing and Detection V |
Volume |
10680 |
Issue |
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Pages |
30-39 |
Keywords |
graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves |
Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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Spie |
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Berghmans, F.; Mignani, A.G. |
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10.1117/12.2307020 |
Serial |
1306 |
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Author |
Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. |
Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation |
Type |
Abstract |
Year |
2014 |
Publication |
Proc. 25th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 25th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
71 |
Keywords |
carbon nanotubes, CNT |
Abstract |
This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. |
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Serial |
1361 |
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Author |
Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. |
Title |
THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites |
Type |
Journal Article |
Year |
2020 |
Publication |
Polymers (Basel) |
Abbreviated Journal |
Polymers (Basel) |
Volume |
12 |
Issue |
12 |
Pages |
3037 (1 to 14) |
Keywords |
THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS |
Abstract |
Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed. |
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Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland |
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English |
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2073-4360 |
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PMID:33353036; PMCID:PMC7767186 |
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no |
Call Number |
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Serial |
1780 |
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Author |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. |
Title |
Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors |
Type |
Journal Article |
Year |
2018 |
Publication |
Phys. Status Solidi B |
Abbreviated Journal |
Phys. Status Solidi B |
Volume |
255 |
Issue |
1 |
Pages |
1700227 (1 to 6) |
Keywords |
carbon nanotube schottky diodes, CNT |
Abstract |
Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz. |
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0370-1972 |
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no |
Call Number |
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Serial |
1321 |
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Author |
Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
Title |
Resonant terahertz detection using graphene plasmons |
Type |
Journal Article |
Year |
2018 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
Volume |
9 |
Issue |
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Pages |
5392 (1 to 8) |
Keywords |
THz, graphene plasmons |
Abstract |
Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. |
Address |
Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru |
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2041-1723 |
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1148 |
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Author |
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
Title |
Tunnel field-effect transistors for sensitive terahertz detection |
Type |
Journal Article |
Year |
2021 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
Volume |
12 |
Issue |
1 |
Pages |
543 |
Keywords |
field-effect transistors, bilayer graphene, BLG |
Abstract |
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
Address |
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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2041-1723 |
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PMID:33483488; PMCID:PMC7822863 |
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no |
Call Number |
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1261 |
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Author |
Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. |
Title |
Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices |
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Journal Article |
Year |
2018 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
Volume |
29 |
Issue |
24 |
Pages |
245204 (1 to 8) |
Keywords |
single layer graphene, graphene nanoribbons |
Abstract |
We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. |
Address |
Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia |
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0957-4484 |
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PMID:29553479 |
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no |
Call Number |
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1308 |
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Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
Title |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
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Conference Article |
Year |
2018 |
Publication |
Materials Today: Proc. |
Abbreviated Journal |
Materials Today: Proc. |
Volume |
5 |
Issue |
13 |
Pages |
27301-27306 |
Keywords |
graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor |
Abstract |
We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. |
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2214-7853 |
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no |
Call Number |
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1316 |
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Author |
Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. |
Title |
Carbon nanotube based terahertz radiation detectors |
Type |
Conference Article |
Year |
2019 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1410 |
Issue |
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Pages |
012208 (1 to 5) |
Keywords |
carbon nanotubes, CNT |
Abstract |
In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested. |
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1742-6588 |
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1270 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
Title |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
Type |
Conference Article |
Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
Volume |
1124 |
Issue |
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Pages |
051054 |
Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
Abstract |
We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1742-6588 |
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1300 |
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