|
|
Smirnov, A. V., Karmantsov, M. S., Smirnov, K. V., Vakhtomin, Y. B., Masterov, D. V., Tarkhov, M. A., et al. (2012). Terahertz response of thin-film YBCO bolometers. Tech. Phys., 57(12), 1716–1719.
Abstract: The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed.
|
|
|
|
Korneeva, Y. P., Mikhailov, M. Y., Pershin, Y. P., Manova, N. N., Divochiy, A. V., Vakhtomin, Y. B., et al. (2014). Superconducting single-photon detector made of MoSi film. Supercond. Sci. Technol., 27(9), 095012.
Abstract: We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film.
|
|
|
|
Smirnov, K., Divochiy, A., Vakhtomin, Y., Morozov, P., Zolotov, P., Antipov, A., et al. (2018). NbN single-photon detectors with saturated dependence of quantum efficiency. Supercond. Sci. Technol., 31(3), 035011 (1 to 8).
Abstract: The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.
|
|
|
|
Lipatov, A., Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Kouminov, P., et al. (2002). An ultrafast NbN hot-electron single-photon detector for electronic applications. Supercond. Sci. Technol., 15(12), 1689–1692.
Abstract: We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
|
|
|
|
Korneev, A., Divochiy, A., Tarkhov, M., Minaeva, O., Seleznev, V., Kaurova, N., et al. (2008). Superconducting NbN-nanowire single-photon detectors capable of photon number resolving. In Supercond. News Forum.
Abstract: We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing.
|
|
|
|
Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Goltsman, G. N., Verevkin, A. A., et al. (2011). Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements. Semicond. Sci. Technol., 26(2), 025013.
Abstract: We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
|
|
|
|
Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semicond., 44(11), 1427–1429.
Abstract: The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
|
|
|
|
Morozov, D. V., Smirnov, K. V., Smirnov, A. V., Lyakhov, V. A., & Goltsman, G. N. (2005). A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Semicond., 39(9), 1082–1086.
Abstract: Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
|
|
|
|
Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Voronov, B. M., Gol’tsman, G. N., Gershenson, E. M., et al. (1999). Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts. Semicond., 33(5), 551–554.
Abstract: The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
|
|
|
|
Pentin, I., Vakhtomin, Y., Seleznev, V., & Smirnov, K. (2020). Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation. Sci. Rep., 10(1), 16819.
Abstract: The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
|
|
