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Hajenius, M., Baselmans, J. J. A., Baryshev, A., Gao, J. R., Klapwijk, T. M., Kooi, J. W., et al. (2006). Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer. J. Appl. Phys., 100(7), 074507.
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Gousev, Y. P., Gol'tsman, G. N., Semenov, A. D., Gershenzon, E. M., Nebosis, R. S., Heusinger, M. A., et al. (1994). Broadband ultrafast superconducting NbN detector for electromagnetic radiation. J. Appl. Phys., 75(7), 3695–3697.
Abstract: An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect.
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de Lange, G., Kuipers, J. J., Klapwijk, T. M., Panhuyzen, R. A., van de Stadt, H., & de Graauw, M. W. M. (1995). Superconducting resonator circuits at frequencies above the gap frequency. J. Appl. Phys., 77(4), 1795–1804.
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Semenov, A. D., Hübers, H. - W., Schubert, J., Gol'tsman, G. N., Elantiev, A. I., Voronov, B. M., et al. (2000). Design and performance of the lattice-cooled hot-electron terahertz mixer. J. Appl. Phys., 88(11), 6758–6767.
Abstract: We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance.
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Kooi, J. W., Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., Dieleman, P., et al. (2007). IF impedance and mixer gain of NbN hot electron bolometers. J. Appl. Phys., 101(4), 044511.
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Burke, P. J., Schoelkopf, R. J., Prober, D. E., Skalare, A., Karasik, B. S., Gaidis, M. C., et al. (1999). Mixing and noise in diffusion and phonon cooled superconducting hot-electron bolometers. J. Appl. Phys., 85(3), 1644–1653.
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Cherednichenko, S., Drakinskiy, V., Baubert, J., Krieg, J. - M., Voronov, B., Gol'tsman, G., et al. (2007). Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes. J. Appl. Phys., 101(12), 124508 (1 to 6).
Abstract: The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Uchiki, H., Kobayashi, T., & Sakaki, H. (1987). Photoluminescence and energyâ€loss rates in GaAs quantum wells under highâ€density excitation. J. Appl. Phys., 62(3), 1010–1016.
Abstract: The timeâ€resolved luminescence spectra from excited conduction subbands in three samples of multiâ€quantumâ€well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under highâ€density excitations by a 30â€ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed timeâ€resolved spectrum to the observed, and the timeâ€dependent electron energy was obtained by using these parameters. The energyâ€loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electronâ€polar phonon scattering, including the screening effect due to the high carrier density.
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Annunziata, A. J., Quaranta, O., Santavicca, D. F., Casaburi, A., Frunzio, L., Ejrnaes, M., et al. (2010). Reset dynamics and latching in niobium superconducting nanowire single-photon detectors. J. Appl. Phys., 108(8), 7.
Abstract: We study the reset dynamics of niobium (Nb) superconducting nanowire single-photon detectors (SNSPDs) using experimental measurements and numerical simulations. The numerical simulations of the detection dynamics agree well with experimental measurements, using independently determined parameters in the simulations. We find that if the photon-induced hotspot cools too slowly, the device will latch into a dc resistive state. To avoid latching, the time for the hotspot to cool must be short compared to the inductive time constant that governs the resetting of the current in the device after hotspot formation. From simulations of the energy relaxation process, we find that the hotspot cooling time is determined primarily by the temperature-dependent electron-phonon inelastic time. Latching prevents reset and precludes subsequent photon detection. Fast resetting to the superconducting state is, therefore, essential, and we demonstrate experimentally how this is achieved. We compare our results to studies of reset and latching in niobium nitride SNSPDs.
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Gayduchenko, I., Kardakova, A., Fedorov, G., Voronov, B., Finkel, M., Jiménez, D., et al. (2015). Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation. J. Appl. Phys., 118(19), 194303.
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
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