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Boreman, G. D. (1997). Infrared microantennas. SPIE, 3110, 882–885.
Abstract: We present results of mesurments of the polarization response of asymetric spiral antennas coupled Ni-NiO-Ni diodes, over the wavelength range 10.2 to 10.7 μm. The feed structure of the antenna imposes an elliptical polarization singature that is different from the circular polarization expected from a symmetric spiral. We develop a lossy-transmission-line model yielding the measured polarization response. A combination of a balanced and an unbalanced mode is required. Reflected current waves from the arm ends are significant.
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Genack, A. Z., Kopp, V. I., Churikov, V. M., Singer, J., Chao, N., & Neugroschl, D. A. (2004). Chiral fiber Bragg gratings. In Proceedings of the SPIE (Vol. 5508, pp. 57–64).
Abstract: We have produced chiral fiber Bragg gratings with double-helix symmetry and measured the polarization and wavelength selective transmission properties of these structures. These gratings interact only with circularly polarized light with the same handedness as the grating twist and freely transmit light of the orthogonal polarization. The optical characteristics of chiral fibers are compared to those of planar cholesteric structures. The resonant standing wave at the band edge or at a defect state within the band gap, as well as the evanescent wave within the band gap is comprised of two counterpropagating components of equal amplitude. The electric field vector of such a circularly polarized standing wave does not rotate in time; rather it is linearly polarized in any given plane. The standing wave may be described in terms of the sense of circular polarization of the two counterpropagating components. The wavelength dependence of the angle q between the linearly polarized electromagnetic field and the extraordinary axis, which is constant throughout a long structure, is obtained in a simple calculation. The results are in good agreement with scattering matrix calculations. Resonant chiral gratings are demonstrated for microwave radiation whereas chiral gratings with pitch exceeding the wavelength are demonstrated at optical wavelengths in single-mode glass fibers. The different functionalities of these fibers are discussed.
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Gol'tsman, G. N., Vachtomin, Y. B., Antipov, S. V., Finkel, M. I., Maslennikov, S. N., Smirnov, K. V., et al. (2005). NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers. In Proc. SPIE (Vol. 5727, pp. 95–106).
Abstract: We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.
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Huebers, H. - W., Semenov, A., Richter, H., Birk, M., Krocka, M., Mair, U., et al. (2003). Superconducting hot electron bolometer as mixer for far-infrared heterodyne receivers. In T. G. Phillips, & J. Zmuidzinas (Eds.), Proc. SPIE (Vol. 4855, pp. 395–401). Presented at the Society of Photo-Optical Instrumentation Engineers (SPIE) Conference, 4855. Tucson, USA: SPIE.
Abstract: Heterodyne receivers for applications in astronomy need quantum limited sensitivity. In instruments which are currently under development for SOFIA or Herschel superconducting hot electron bolometers (HEB) will be used to achieve this goal at frequencies above 1.4 THz. We present results of the development of a phonon-cooled NbN HEB mixer for GREAT, the German Receiver for Astronomy at Terahertz Frequencies, which will be flown aboard SOFIA. The mixer is a small superconducting bridge incorporated in a planar feed antenna and a hyperhemispherical lens. Mixers with logarithmic-spiral and double-slot feed antennas have been investigated with respect to their noise temperature, conversion loss, linearity and beam pattern. At 2.5 THz a double sideband noise temperature of 2200 K was achieved. The conversion loss was 17 dB. The response of the mixer was linear up to 400 K load temperature. The performance was verified by measuring an emission line of methanol at 2.5 THz. The measured linewidth is in good agreement with the linewidth deduced from pressure broadening measurements at millimeter wavelength. The results demonstrate that the NbN HEB is very well suited as a mixer for far-infrared heterodyne receivers.
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Cherednichenko, S., Drakinskiy, V., Baubert, J., Lecomte, B., Dauplay, F., Krieg, J. M., et al. (2006). 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers. In Proc. SPIE (Vol. 6275, 62750I (1 to 11)).
Abstract: A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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