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Gerecht, E., Musante, C. F., Yngvesson, K. S., Waldman, J., Gol'tsman, G. N., Yagoubov, P. A., et al. (1997). Optical coupling and conversion gain for NbN HEB mixer at THz frequencies. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 47–50).
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Yagoubov, P., Hübers, H. - W., Gol’tsman, G., Semenov, A., Gao, J., Hoogeveen, R., et al. (2001). Hot-electron bolometer mixers – technology for far-infrared heterodyne instruments in future atmospheric chemistry missions. In S. Buehler, & Berlin (Eds.), Proc. 3rd Int. Symp. Submillimeter Wave Earth Observation From Space (pp. 57–69). Logos-Verlag.
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Ekström, H., Kroug, M., Belitsky, V., Kollberg, E., Olsson, H., Goltsman, G., et al. (1996). Hot electron mixers for THz applications. In E. J. Rolfe, & G. Pilbratt (Eds.), Proc. 30th ESLAB (pp. 207–210).
Abstract: We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
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Merkel, H. F., Yagoubov, P. A., Kroug, M., Khosropanah, P., Kollberg, E. L., Gol’tsman, G. N., et al. (1998). Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies. In Proc. 28th European Microwave Conf. (Vol. 1, pp. 294–299).
Abstract: In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
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Cherednichenko, S., Yagoubov, P., Il'in, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers. In Proc. 27th Eur. Microwave Conf. (Vol. 2, pp. 972–977). IEEE.
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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